DE69223534T2 - Trockenätzverfahren und Anwendung davon - Google Patents

Trockenätzverfahren und Anwendung davon

Info

Publication number
DE69223534T2
DE69223534T2 DE69223534T DE69223534T DE69223534T2 DE 69223534 T2 DE69223534 T2 DE 69223534T2 DE 69223534 T DE69223534 T DE 69223534T DE 69223534 T DE69223534 T DE 69223534T DE 69223534 T2 DE69223534 T2 DE 69223534T2
Authority
DE
Germany
Prior art keywords
application
etching process
dry etching
dry
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69223534T
Other languages
English (en)
Other versions
DE69223534D1 (de
Inventor
Masaru Koeda
Tetsuya Nagano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shimadzu Corp
Original Assignee
Shimadzu Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP3057524A external-priority patent/JP2661390B2/ja
Priority claimed from JP3094518A external-priority patent/JPH0830764B2/ja
Application filed by Shimadzu Corp filed Critical Shimadzu Corp
Application granted granted Critical
Publication of DE69223534D1 publication Critical patent/DE69223534D1/de
Publication of DE69223534T2 publication Critical patent/DE69223534T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/124—Geodesic lenses or integrated gratings
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/53—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete
    • C04B41/5338—Etching
    • C04B41/5346—Dry etching
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/91—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics involving the removal of part of the materials of the treated articles, e.g. etching
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1847—Manufacturing methods
    • G02B5/1857—Manufacturing methods using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/0475—Changing the shape of the semiconductor body, e.g. forming recesses

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
  • Drying Of Semiconductors (AREA)
DE69223534T 1991-03-22 1992-03-20 Trockenätzverfahren und Anwendung davon Expired - Fee Related DE69223534T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP3057524A JP2661390B2 (ja) 1991-03-22 1991-03-22 ＳｉＣのエッチング方法
JP3094518A JPH0830764B2 (ja) 1991-04-25 1991-04-25 回折格子の製造方法

Publications (2)

Publication Number Publication Date
DE69223534D1 DE69223534D1 (de) 1998-01-29
DE69223534T2 true DE69223534T2 (de) 1998-07-09

Family

ID=26398586

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69223534T Expired - Fee Related DE69223534T2 (de) 1991-03-22 1992-03-20 Trockenätzverfahren und Anwendung davon

Country Status (5)

Country Link
US (1) US5234537A (de)
EP (1) EP0504912B1 (de)
CN (1) CN1036868C (de)
DE (1) DE69223534T2 (de)
SG (1) SG49673A1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004049233A1 (de) * 2004-10-09 2006-04-20 Schott Ag Verfahren zur Mikrostrukturierung von Substraten aus Flachglas

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07117605B2 (ja) * 1992-03-13 1995-12-18 日本ピラー工業株式会社 回折格子
US5559367A (en) * 1994-07-12 1996-09-24 International Business Machines Corporation Diamond-like carbon for use in VLSI and ULSI interconnect systems
US5770120A (en) * 1994-12-09 1998-06-23 Olympus Optical Co., Ltd. Method of manufacturing die and optical element performed by using the die
FR2730725B1 (fr) * 1995-02-16 1997-11-14 Saverglass Verrerie Procede d'attaque superficielle d'une surface d'un materiau vitreux multicomposants par plasma
JP3407477B2 (ja) * 1995-06-08 2003-05-19 松下電器産業株式会社 位相格子とその作製方法並びに光学式エンコーダ
US5571374A (en) * 1995-10-02 1996-11-05 Motorola Method of etching silicon carbide
US5814563A (en) * 1996-04-29 1998-09-29 Applied Materials, Inc. Method for etching dielectric using fluorohydrocarbon gas, NH3 -generating gas, and carbon-oxygen gas
US5843847A (en) * 1996-04-29 1998-12-01 Applied Materials, Inc. Method for etching dielectric layers with high selectivity and low microloading
IL124592A (en) * 1997-05-23 2002-07-25 Gersan Ets Method of marking a gemstone or diamond
US6001268A (en) * 1997-06-05 1999-12-14 International Business Machines Corporation Reactive ion etching of alumina/TiC substrates
US6506315B2 (en) * 1998-12-23 2003-01-14 Illinois Tool Works, Inc. Method of reproducing colored images on a heat transferable decorative, at least partially metallized and/or 2 D or 3 D holographic film
US20060216478A1 (en) * 2000-07-26 2006-09-28 Shimadzu Corporation Grating, negative and replica gratings of the grating, and method of manufacturing the same
JP2003077896A (ja) * 2001-08-31 2003-03-14 Tokyo Electron Ltd エッチング方法
JP5061506B2 (ja) * 2006-06-05 2012-10-31 富士電機株式会社 炭化珪素半導体装置の製造方法
JP5509520B2 (ja) * 2006-12-21 2014-06-04 富士電機株式会社 炭化珪素半導体装置の製造方法
WO2011068884A2 (en) 2009-12-01 2011-06-09 University Of Massachusetts A system for producing patterned silicon carbide structures
CN102468372A (zh) * 2010-11-09 2012-05-23 山东华光光电子有限公司 GaN基垂直结构LED中SiC衬底的剥离方法
CN102360093A (zh) 2011-10-19 2012-02-22 苏州大学 一种全息闪耀光栅制作方法
CN102832167B (zh) * 2012-06-21 2016-01-20 上海华力微电子有限公司 金属硬掩膜层制备方法以及半导体制造方法
CN103513489B (zh) * 2012-06-28 2016-12-21 中国科学院理化技术研究所 一种激光承载及光束变换器件
CN102925969B (zh) * 2012-11-12 2016-01-06 上海应用技术学院 图形化的SiC衬底
SG11201509479WA (en) * 2013-05-30 2015-12-30 Goldway Technology Ltd Method of marking material and system therefore, and material marked according to same method
KR20230117764A (ko) * 2017-01-05 2023-08-09 매직 립, 인코포레이티드 플라즈마 에칭에 의한 고굴절률 유리들의 패터닝
TWI767081B (zh) * 2017-10-30 2022-06-11 美商菲絲博克科技有限公司 利用化學輔助反應離子束蝕刻製造傾斜表面浮雕結構的系統及方法
CN108439329A (zh) * 2018-03-14 2018-08-24 河南科技大学 一种微纳模具型槽的制备方法
CN109143437B (zh) * 2018-10-12 2021-03-02 宁波源禄光电有限公司 一种机械切削-离子束刻蚀制备光栅方法
CN113811803A (zh) * 2019-03-12 2021-12-17 奇跃公司 具有高折射率材料的波导及其制造方法
CN113687460B (zh) * 2021-07-29 2023-06-06 中国工程物理研究院激光聚变研究中心 一种边界快速延伸的声波等离子体光栅产生方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5275341A (en) * 1975-12-19 1977-06-24 Rikagaku Kenkyusho Method of producing echelette grating
US4155627A (en) * 1976-02-02 1979-05-22 Rca Corporation Color diffractive subtractive filter master recording comprising a plurality of superposed two-level relief patterns on the surface of a substrate
US4124473A (en) * 1977-06-17 1978-11-07 Rca Corporation Fabrication of multi-level relief patterns in a substrate
JPS56169776A (en) * 1980-06-03 1981-12-26 Tokyo Ohka Kogyo Co Ltd Selective dry etching method
DE3615519A1 (de) * 1986-05-07 1987-11-12 Siemens Ag Verfahren zum erzeugen von kontaktloechern mit abgeschraegten flanken in zwischenoxidschichten
US4981551A (en) * 1987-11-03 1991-01-01 North Carolina State University Dry etching of silicon carbide
US4865685A (en) * 1987-11-03 1989-09-12 North Carolina State University Dry etching of silicon carbide
US5005075A (en) * 1989-01-31 1991-04-02 Hoya Corporation X-ray mask and method of manufacturing an X-ray mask
DE69033151T2 (de) * 1989-02-23 1999-12-09 Seiko Epson Corp Ätzverfahren für Verbindungshalbleiter
CA2029674C (en) * 1989-11-13 1997-06-10 Keiji Sakai Manufacturing method of optical diffraction grating element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004049233A1 (de) * 2004-10-09 2006-04-20 Schott Ag Verfahren zur Mikrostrukturierung von Substraten aus Flachglas
US7476623B2 (en) 2004-10-09 2009-01-13 Schott Ag Method for microstructuring flat glass substrates

Also Published As

Publication number Publication date
EP0504912A1 (de) 1992-09-23
EP0504912B1 (de) 1997-12-17
CN1066512A (zh) 1992-11-25
CN1036868C (zh) 1997-12-31
SG49673A1 (en) 1998-06-15
DE69223534D1 (de) 1998-01-29
US5234537A (en) 1993-08-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee