JPS6328341B2 - - Google Patents
Info
- Publication number
- JPS6328341B2 JPS6328341B2 JP55182148A JP18214880A JPS6328341B2 JP S6328341 B2 JPS6328341 B2 JP S6328341B2 JP 55182148 A JP55182148 A JP 55182148A JP 18214880 A JP18214880 A JP 18214880A JP S6328341 B2 JPS6328341 B2 JP S6328341B2
- Authority
- JP
- Japan
- Prior art keywords
- polycrystalline silicon
- insulating film
- resistance element
- film
- silicon film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 29
- 239000012535 impurity Substances 0.000 claims description 19
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 12
- 238000000137 annealing Methods 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 2
- 239000011810 insulating material Substances 0.000 claims 1
- 239000013078 crystal Substances 0.000 description 16
- 150000002500 ions Chemical class 0.000 description 13
- 239000000758 substrate Substances 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Landscapes
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55182148A JPS57106101A (en) | 1980-12-24 | 1980-12-24 | Method of producing semiconductor resistance element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55182148A JPS57106101A (en) | 1980-12-24 | 1980-12-24 | Method of producing semiconductor resistance element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57106101A JPS57106101A (en) | 1982-07-01 |
| JPS6328341B2 true JPS6328341B2 (enrdf_load_stackoverflow) | 1988-06-08 |
Family
ID=16113193
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55182148A Granted JPS57106101A (en) | 1980-12-24 | 1980-12-24 | Method of producing semiconductor resistance element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57106101A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60116160A (ja) * | 1983-11-29 | 1985-06-22 | Sony Corp | 半導体装置の製造方法 |
| CN114306860B (zh) | 2009-05-29 | 2024-10-18 | 瑞思迈私人有限公司 | 鼻面罩系统 |
-
1980
- 1980-12-24 JP JP55182148A patent/JPS57106101A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57106101A (en) | 1982-07-01 |