JPS6328323B2 - - Google Patents
Info
- Publication number
- JPS6328323B2 JPS6328323B2 JP55186258A JP18625880A JPS6328323B2 JP S6328323 B2 JPS6328323 B2 JP S6328323B2 JP 55186258 A JP55186258 A JP 55186258A JP 18625880 A JP18625880 A JP 18625880A JP S6328323 B2 JPS6328323 B2 JP S6328323B2
- Authority
- JP
- Japan
- Prior art keywords
- added
- semiconductor
- amount
- batio
- tisi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 31
- 239000000919 ceramic Substances 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 238000010304 firing Methods 0.000 claims description 5
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 2
- 229910002113 barium titanate Inorganic materials 0.000 claims description 2
- 229910008484 TiSi Inorganic materials 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 229910016066 BaSi Inorganic materials 0.000 description 4
- 229910010413 TiO 2 Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052788 barium Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 2
- PONGKJLRIGEQCT-UHFFFAOYSA-N [Si]([O-])([O-])([O-])[O-].[Ti+4].[Ba+2] Chemical class [Si]([O-])([O-])([O-])[O-].[Ti+4].[Ba+2] PONGKJLRIGEQCT-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- HMOQPOVBDRFNIU-UHFFFAOYSA-N barium(2+);dioxido(oxo)silane Chemical class [Ba+2].[O-][Si]([O-])=O HMOQPOVBDRFNIU-UHFFFAOYSA-N 0.000 description 2
- 239000012153 distilled water Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910003781 PbTiO3 Inorganic materials 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 229910052916 barium silicate Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- -1 silicate compound Chemical class 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
- Compositions Of Oxide Ceramics (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55186258A JPS57109301A (en) | 1980-12-26 | 1980-12-26 | Method of producing positive temperature coefficient porcelain semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55186258A JPS57109301A (en) | 1980-12-26 | 1980-12-26 | Method of producing positive temperature coefficient porcelain semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57109301A JPS57109301A (en) | 1982-07-07 |
| JPS6328323B2 true JPS6328323B2 (enrdf_load_stackoverflow) | 1988-06-08 |
Family
ID=16185120
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55186258A Granted JPS57109301A (en) | 1980-12-26 | 1980-12-26 | Method of producing positive temperature coefficient porcelain semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57109301A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4080576B2 (ja) * | 1997-09-05 | 2008-04-23 | Ｔｄｋ株式会社 | 正特性半導体磁器の製造方法 |
| JP4058140B2 (ja) * | 1997-09-05 | 2008-03-05 | Ｔｄｋ株式会社 | チタン酸バリウム系半導体磁器 |
-
1980
- 1980-12-26 JP JP55186258A patent/JPS57109301A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57109301A (en) | 1982-07-07 |
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