JPS57109301A - Method of producing positive temperature coefficient porcelain semiconductor - Google Patents

Method of producing positive temperature coefficient porcelain semiconductor

Info

Publication number
JPS57109301A
JPS57109301A JP55186258A JP18625880A JPS57109301A JP S57109301 A JPS57109301 A JP S57109301A JP 55186258 A JP55186258 A JP 55186258A JP 18625880 A JP18625880 A JP 18625880A JP S57109301 A JPS57109301 A JP S57109301A
Authority
JP
Japan
Prior art keywords
temperature coefficient
positive temperature
producing positive
porcelain semiconductor
porcelain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55186258A
Other languages
Japanese (ja)
Other versions
JPS6328323B2 (en
Inventor
Hirokatsu Mukai
Jiyun Niwa
Naoto Miwa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
NipponDenso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NipponDenso Co Ltd filed Critical NipponDenso Co Ltd
Priority to JP55186258A priority Critical patent/JPS57109301A/en
Publication of JPS57109301A publication Critical patent/JPS57109301A/en
Publication of JPS6328323B2 publication Critical patent/JPS6328323B2/ja
Granted legal-status Critical Current

Links

JP55186258A 1980-12-26 1980-12-26 Method of producing positive temperature coefficient porcelain semiconductor Granted JPS57109301A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55186258A JPS57109301A (en) 1980-12-26 1980-12-26 Method of producing positive temperature coefficient porcelain semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55186258A JPS57109301A (en) 1980-12-26 1980-12-26 Method of producing positive temperature coefficient porcelain semiconductor

Publications (2)

Publication Number Publication Date
JPS57109301A true JPS57109301A (en) 1982-07-07
JPS6328323B2 JPS6328323B2 (en) 1988-06-08

Family

ID=16185120

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55186258A Granted JPS57109301A (en) 1980-12-26 1980-12-26 Method of producing positive temperature coefficient porcelain semiconductor

Country Status (1)

Country Link
JP (1) JPS57109301A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6221800B1 (en) * 1997-09-05 2001-04-24 Tdk Corporation Method of producing PTC semiconducting ceramic
EP0937692A4 (en) * 1997-09-05 2003-05-14 Tdk Corp Barium titanate-base semiconductor ceramic

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6221800B1 (en) * 1997-09-05 2001-04-24 Tdk Corporation Method of producing PTC semiconducting ceramic
KR100358974B1 (en) * 1997-09-05 2002-10-31 티디케이가부시기가이샤 Method of producing semiconductor ceramic having positive temperature coefficient
EP0937692A4 (en) * 1997-09-05 2003-05-14 Tdk Corp Barium titanate-base semiconductor ceramic

Also Published As

Publication number Publication date
JPS6328323B2 (en) 1988-06-08

Similar Documents

Publication Publication Date Title
JPS5743413A (en) Semiconductor element and method of producing same
JPS5791555A (en) Semiconductor element and method of producing same
JPS5748240A (en) Semiconductor element and method of producing same
JPS56110201A (en) Method of forming positive temperature coefficient porcelain semiconductor
JPS57109301A (en) Method of producing positive temperature coefficient porcelain semiconductor
JPS575309A (en) Method of producing positive temperature coefficient porclain semiconductor
JPS56160007A (en) Method of manufacturing oxide semiconductor for thermistor
JPS57125042A (en) Manufacture of heat-resisting insulator
JPS56153703A (en) Method of manufacturing positive temperature coefficient porcelain semiconductor
JPS56124201A (en) Method of forming electrode for positive temperature coefficient porcelain semiconductor
JPS5719902A (en) Method of producing ceramic semiconductor element
JPS5764903A (en) Method of producing oxide semiconducotr materila for thermistor
JPS5726402A (en) Method of producing positive temperature coefficient thermistor
JPS5769727A (en) Method of producing semiconductor porcelain condenser
JPS56118301A (en) Method of manufacturing porcelain semiconductor
JPS5676503A (en) Method of fabricating positive temperature coefficient porcelain semiconductor
JPS57106101A (en) Method of producing semiconductor resistance element
JPS5724502A (en) Method of producing ceramic semiconductor element
JPS5742102A (en) Method of producing thick film positive temperature coefficient semiconductor element
JPS577119A (en) Method of forming semiconductor ribbon
JPS56120117A (en) Method of manufacturing semiconductor porcelain condenser
JPS56122104A (en) Method of manufacturing thermistor
JPS57166003A (en) Method of producing positive temperature coefficient thermistor
JPS57187905A (en) Method of producing positive temperature coefficient thermistor
JPS56149706A (en) Method of manufacturing inorganic mica insulator