JPS63283149A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS63283149A JPS63283149A JP62116903A JP11690387A JPS63283149A JP S63283149 A JPS63283149 A JP S63283149A JP 62116903 A JP62116903 A JP 62116903A JP 11690387 A JP11690387 A JP 11690387A JP S63283149 A JPS63283149 A JP S63283149A
- Authority
- JP
- Japan
- Prior art keywords
- electrodes
- silicide
- terminal electrodes
- devices
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H10W72/072—
Landscapes
- Wire Bonding (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62116903A JPS63283149A (ja) | 1987-05-15 | 1987-05-15 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62116903A JPS63283149A (ja) | 1987-05-15 | 1987-05-15 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63283149A true JPS63283149A (ja) | 1988-11-21 |
| JPH0579177B2 JPH0579177B2 (enExample) | 1993-11-01 |
Family
ID=14698493
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62116903A Granted JPS63283149A (ja) | 1987-05-15 | 1987-05-15 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63283149A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7112468B2 (en) | 1998-09-25 | 2006-09-26 | Stmicroelectronics, Inc. | Stacked multi-component integrated circuit microprocessor |
-
1987
- 1987-05-15 JP JP62116903A patent/JPS63283149A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7112468B2 (en) | 1998-09-25 | 2006-09-26 | Stmicroelectronics, Inc. | Stacked multi-component integrated circuit microprocessor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0579177B2 (enExample) | 1993-11-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0253691B1 (en) | Silicon die bonding process | |
| JP2983486B2 (ja) | ろう材料層を有する半導体基体 | |
| US5879530A (en) | Anisotropic conductive film for microconnections | |
| JP4969589B2 (ja) | ペルチェ素子精製プロセスとペルチェ素子 | |
| JPH0365897B2 (enExample) | ||
| US6039238A (en) | Electrical connection method | |
| JPH0136254B2 (enExample) | ||
| US3293509A (en) | Semiconductor devices with terminal contacts and method of their production | |
| US3982908A (en) | Nickel-gold-cobalt contact for silicon devices | |
| JPH10107047A (ja) | ろう材層を有する半導体基体 | |
| JPS63283149A (ja) | 半導体装置の製造方法 | |
| US3224072A (en) | Method of forming an electrical connection to an insulating base | |
| US3686539A (en) | Gallium arsenide semiconductor device with improved ohmic electrode | |
| JPH0581189B2 (enExample) | ||
| JPS63204620A (ja) | ハイブリッド厚膜回路におけるボンデイングワイヤとコンタクト領域との間の接続形成方法 | |
| JPH02177463A (ja) | セラミック―金属複合基板の製造方法 | |
| JPS60165740A (ja) | バイポーラ電子回路素子特に半導体回路素子の接触装置 | |
| JPH0760836B2 (ja) | ろう付け材料 | |
| JP2551155B2 (ja) | セラミックー金属接合用ろう材,セラミックー金属複合基板およびその製造方法 | |
| WO2021052758A1 (en) | Method of forming a cohesive connection between a semiconductor with an aluminium coated contact surface and a shaped metal body, as well as a semiconductor module comprising and a shaped metal body cohesively attached to a semiconductor | |
| JPS5928049B2 (ja) | 半導体装置のリ−ド接続方法 | |
| JPS5821424B2 (ja) | 半導体材料支持用基板の製造方法 | |
| JPH02206137A (ja) | 半導体素子接続方法 | |
| JPS6010674A (ja) | 半導体素子の製造方法 | |
| JPS5936828B2 (ja) | 半導体素子取付構造 |