JPS6327074A - ホール素子の製造方法 - Google Patents
ホール素子の製造方法Info
- Publication number
- JPS6327074A JPS6327074A JP61170615A JP17061586A JPS6327074A JP S6327074 A JPS6327074 A JP S6327074A JP 61170615 A JP61170615 A JP 61170615A JP 17061586 A JP17061586 A JP 17061586A JP S6327074 A JPS6327074 A JP S6327074A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- ferrite
- hall element
- compound semiconductor
- active region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 239000012535 impurity Substances 0.000 claims abstract description 11
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 150000001875 compounds Chemical class 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims abstract description 9
- 239000003302 ferromagnetic material Substances 0.000 claims abstract description 7
- 229910000859 α-Fe Inorganic materials 0.000 abstract description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 7
- 150000002500 ions Chemical class 0.000 abstract description 6
- 238000000151 deposition Methods 0.000 abstract 1
- 238000002513 implantation Methods 0.000 description 10
- 239000010408 film Substances 0.000 description 9
- 230000005291 magnetic effect Effects 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- -1 silicon ions Chemical class 0.000 description 7
- 238000005468 ion implantation Methods 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 230000004907 flux Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/101—Semiconductor Hall-effect devices
Landscapes
- Hall/Mr Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61170615A JPS6327074A (ja) | 1986-07-18 | 1986-07-18 | ホール素子の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61170615A JPS6327074A (ja) | 1986-07-18 | 1986-07-18 | ホール素子の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6327074A true JPS6327074A (ja) | 1988-02-04 |
| JPH0467793B2 JPH0467793B2 (enrdf_load_html_response) | 1992-10-29 |
Family
ID=15908146
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61170615A Granted JPS6327074A (ja) | 1986-07-18 | 1986-07-18 | ホール素子の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6327074A (enrdf_load_html_response) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51140494A (en) * | 1975-05-14 | 1976-12-03 | Ibm | Magnetic sensor |
| JPS5519896A (en) * | 1978-07-21 | 1980-02-12 | Stout Glenn M | Capsule filled hall effect device |
| JPS55117294A (en) * | 1979-02-28 | 1980-09-09 | Tdk Corp | Hall effect device |
-
1986
- 1986-07-18 JP JP61170615A patent/JPS6327074A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51140494A (en) * | 1975-05-14 | 1976-12-03 | Ibm | Magnetic sensor |
| JPS5519896A (en) * | 1978-07-21 | 1980-02-12 | Stout Glenn M | Capsule filled hall effect device |
| JPS55117294A (en) * | 1979-02-28 | 1980-09-09 | Tdk Corp | Hall effect device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0467793B2 (enrdf_load_html_response) | 1992-10-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS60175471A (ja) | ホ−ル素子 | |
| JPS6327074A (ja) | ホール素子の製造方法 | |
| JPH0311897Y2 (enrdf_load_html_response) | ||
| JPS6327075A (ja) | ホール素子 | |
| JPH0467794B2 (enrdf_load_html_response) | ||
| TW552708B (en) | Manufacturing method of Schottky barrier diode | |
| JPH02222549A (ja) | 半導体装置の構造 | |
| JPS637033B2 (enrdf_load_html_response) | ||
| JPH05175238A (ja) | 接合型電界効果トランジスタ | |
| JPH0564473B2 (enrdf_load_html_response) | ||
| JPS63228760A (ja) | 半導体装置の製造方法 | |
| JPH03231424A (ja) | 化合物半導体装置の製造方法 | |
| JPH0745973Y2 (ja) | ホール素子装置 | |
| JPS6136983A (ja) | 半導体磁気センサ装置 | |
| JP3142592B2 (ja) | 合金電極形成方法 | |
| JP2682032B2 (ja) | 半導体装置の製造方法 | |
| JPS5934681A (ja) | ホ−ル素子 | |
| JPH0783026B2 (ja) | 電界効果トランジスタの製造方法 | |
| JPH0256938A (ja) | 電界効果トランジスタ及びその製法 | |
| JPH04291761A (ja) | 半導体装置の製造方法 | |
| JPH0430473A (ja) | ショットキーバリア半導体装置の製造方法 | |
| JPH04192362A (ja) | 静電誘導型半導体装置の製造方法 | |
| JPH0864887A (ja) | ＧａＡｓホール素子 | |
| JPH05308080A (ja) | バイポ―ラトランジスタの製法 | |
| JPS58206168A (ja) | 半導体装置およびその製造方法 |