JPS6325965A - 半導体集積回路 - Google Patents
半導体集積回路Info
- Publication number
- JPS6325965A JPS6325965A JP62133883A JP13388387A JPS6325965A JP S6325965 A JPS6325965 A JP S6325965A JP 62133883 A JP62133883 A JP 62133883A JP 13388387 A JP13388387 A JP 13388387A JP S6325965 A JPS6325965 A JP S6325965A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- drain
- potential
- depletion
- depletion layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
- H10D84/857—Complementary IGFETs, e.g. CMOS comprising an N-type well but not a P-type well
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62133883A JPS6325965A (ja) | 1987-05-29 | 1987-05-29 | 半導体集積回路 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62133883A JPS6325965A (ja) | 1987-05-29 | 1987-05-29 | 半導体集積回路 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12490378A Division JPS5552266A (en) | 1978-10-11 | 1978-10-11 | Semiconductor integrated circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6325965A true JPS6325965A (ja) | 1988-02-03 |
JPH0362306B2 JPH0362306B2 (enrdf_load_stackoverflow) | 1991-09-25 |
Family
ID=15115318
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62133883A Granted JPS6325965A (ja) | 1987-05-29 | 1987-05-29 | 半導体集積回路 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6325965A (enrdf_load_stackoverflow) |
-
1987
- 1987-05-29 JP JP62133883A patent/JPS6325965A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH0362306B2 (enrdf_load_stackoverflow) | 1991-09-25 |
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