JPH0362306B2 - - Google Patents

Info

Publication number
JPH0362306B2
JPH0362306B2 JP62133883A JP13388387A JPH0362306B2 JP H0362306 B2 JPH0362306 B2 JP H0362306B2 JP 62133883 A JP62133883 A JP 62133883A JP 13388387 A JP13388387 A JP 13388387A JP H0362306 B2 JPH0362306 B2 JP H0362306B2
Authority
JP
Japan
Prior art keywords
layer
potential
depletion layer
drain region
diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62133883A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6325965A (ja
Inventor
Shinji Morozumi
Tatsuji Asakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP62133883A priority Critical patent/JPS6325965A/ja
Publication of JPS6325965A publication Critical patent/JPS6325965A/ja
Publication of JPH0362306B2 publication Critical patent/JPH0362306B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/857—Complementary IGFETs, e.g. CMOS comprising an N-type well but not a P-type well

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP62133883A 1987-05-29 1987-05-29 半導体集積回路 Granted JPS6325965A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62133883A JPS6325965A (ja) 1987-05-29 1987-05-29 半導体集積回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62133883A JPS6325965A (ja) 1987-05-29 1987-05-29 半導体集積回路

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP12490378A Division JPS5552266A (en) 1978-10-11 1978-10-11 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS6325965A JPS6325965A (ja) 1988-02-03
JPH0362306B2 true JPH0362306B2 (enrdf_load_stackoverflow) 1991-09-25

Family

ID=15115318

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62133883A Granted JPS6325965A (ja) 1987-05-29 1987-05-29 半導体集積回路

Country Status (1)

Country Link
JP (1) JPS6325965A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS6325965A (ja) 1988-02-03

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