JPS6325508B2 - - Google Patents

Info

Publication number
JPS6325508B2
JPS6325508B2 JP55156058A JP15605880A JPS6325508B2 JP S6325508 B2 JPS6325508 B2 JP S6325508B2 JP 55156058 A JP55156058 A JP 55156058A JP 15605880 A JP15605880 A JP 15605880A JP S6325508 B2 JPS6325508 B2 JP S6325508B2
Authority
JP
Japan
Prior art keywords
type
forming
ions
layer
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55156058A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5680162A (en
Inventor
Emesu Magudoo Inguritsudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS5680162A publication Critical patent/JPS5680162A/ja
Publication of JPS6325508B2 publication Critical patent/JPS6325508B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H10P32/1414—
    • H10P32/171—
    • H10P32/302—

Landscapes

  • Bipolar Transistors (AREA)
JP15605880A 1979-12-03 1980-11-07 Method of manufacturing pnp transistor Granted JPS5680162A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US9969579A 1979-12-03 1979-12-03

Publications (2)

Publication Number Publication Date
JPS5680162A JPS5680162A (en) 1981-07-01
JPS6325508B2 true JPS6325508B2 (OSRAM) 1988-05-25

Family

ID=22276179

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15605880A Granted JPS5680162A (en) 1979-12-03 1980-11-07 Method of manufacturing pnp transistor

Country Status (3)

Country Link
EP (1) EP0029887B1 (OSRAM)
JP (1) JPS5680162A (OSRAM)
DE (1) DE3064143D1 (OSRAM)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2135118B (en) * 1983-02-09 1986-10-08 Westinghouse Brake & Signal Thyristors
US4546536A (en) * 1983-08-04 1985-10-15 International Business Machines Corporation Fabrication methods for high performance lateral bipolar transistors
JPS60218873A (ja) * 1984-04-13 1985-11-01 Rohm Co Ltd 半導体装置の製造方法
JP2602490B2 (ja) * 1984-05-28 1997-04-23 フィリップス エレクトロニクス ネムローゼ フェンノートシャップ 半導体装置の製造方法
JPS61136267A (ja) * 1984-12-07 1986-06-24 Nec Corp バイポ−ラ半導体装置
JP2765864B2 (ja) * 1988-08-31 1998-06-18 山形日本電気株式会社 半導体装置の製造方法
JP2618502B2 (ja) * 1989-11-30 1997-06-11 キヤノン株式会社 半導体装置及び電子装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2449688C3 (de) * 1974-10-18 1980-07-10 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung einer dotierten Zone eines Leitfähigkeitstyps in einem Halbleiterkörper
NL7604445A (nl) * 1976-04-27 1977-10-31 Philips Nv Werkwijze ter vervaardiging van een halfgelei- derinrichting, en inrichting vervaardigd door toepassing van de werkwijze.
DE2640465A1 (de) * 1976-09-08 1978-03-09 Siemens Ag Verfahren zur herstellung dotierter zonen in einem halbleitersubstrat
NL7612883A (nl) * 1976-11-19 1978-05-23 Philips Nv Halfgeleiderinrichting, en werkwijze ter ver- vaardiging daarvan.
JPS53132275A (en) * 1977-04-25 1978-11-17 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and its production
NL190710C (nl) * 1978-02-10 1994-07-01 Nec Corp Geintegreerde halfgeleiderketen.
CA1129118A (en) * 1978-07-19 1982-08-03 Tetsushi Sakai Semiconductor devices and method of manufacturing the same

Also Published As

Publication number Publication date
DE3064143D1 (en) 1983-08-18
EP0029887B1 (de) 1983-07-13
EP0029887A1 (de) 1981-06-10
JPS5680162A (en) 1981-07-01

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