JPS5680162A - Method of manufacturing pnp transistor - Google Patents

Method of manufacturing pnp transistor

Info

Publication number
JPS5680162A
JPS5680162A JP15605880A JP15605880A JPS5680162A JP S5680162 A JPS5680162 A JP S5680162A JP 15605880 A JP15605880 A JP 15605880A JP 15605880 A JP15605880 A JP 15605880A JP S5680162 A JPS5680162 A JP S5680162A
Authority
JP
Japan
Prior art keywords
manufacturing
pnp transistor
pnp
transistor
manufacturing pnp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15605880A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6325508B2 (OSRAM
Inventor
Emesu Magudoo Inguritsudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS5680162A publication Critical patent/JPS5680162A/ja
Publication of JPS6325508B2 publication Critical patent/JPS6325508B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H10P32/1414—
    • H10P32/171—
    • H10P32/302—

Landscapes

  • Bipolar Transistors (AREA)
JP15605880A 1979-12-03 1980-11-07 Method of manufacturing pnp transistor Granted JPS5680162A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US9969579A 1979-12-03 1979-12-03

Publications (2)

Publication Number Publication Date
JPS5680162A true JPS5680162A (en) 1981-07-01
JPS6325508B2 JPS6325508B2 (OSRAM) 1988-05-25

Family

ID=22276179

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15605880A Granted JPS5680162A (en) 1979-12-03 1980-11-07 Method of manufacturing pnp transistor

Country Status (3)

Country Link
EP (1) EP0029887B1 (OSRAM)
JP (1) JPS5680162A (OSRAM)
DE (1) DE3064143D1 (OSRAM)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60218873A (ja) * 1984-04-13 1985-11-01 Rohm Co Ltd 半導体装置の製造方法
JPS60257168A (ja) * 1984-05-28 1985-12-18 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン 半導体装置の製造方法
JPS61136267A (ja) * 1984-12-07 1986-06-24 Nec Corp バイポ−ラ半導体装置
JPH02197133A (ja) * 1988-08-31 1990-08-03 Nec Yamagata Ltd 半導体装置の製造方法
JPH03173134A (ja) * 1989-11-30 1991-07-26 Canon Inc 半導体装置及び電子装置

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2135118B (en) * 1983-02-09 1986-10-08 Westinghouse Brake & Signal Thyristors
US4546536A (en) * 1983-08-04 1985-10-15 International Business Machines Corporation Fabrication methods for high performance lateral bipolar transistors

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2449688C3 (de) * 1974-10-18 1980-07-10 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung einer dotierten Zone eines Leitfähigkeitstyps in einem Halbleiterkörper
NL7604445A (nl) * 1976-04-27 1977-10-31 Philips Nv Werkwijze ter vervaardiging van een halfgelei- derinrichting, en inrichting vervaardigd door toepassing van de werkwijze.
DE2640465A1 (de) * 1976-09-08 1978-03-09 Siemens Ag Verfahren zur herstellung dotierter zonen in einem halbleitersubstrat
NL7612883A (nl) * 1976-11-19 1978-05-23 Philips Nv Halfgeleiderinrichting, en werkwijze ter ver- vaardiging daarvan.
JPS53132275A (en) * 1977-04-25 1978-11-17 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and its production
NL190710C (nl) * 1978-02-10 1994-07-01 Nec Corp Geintegreerde halfgeleiderketen.
CA1129118A (en) * 1978-07-19 1982-08-03 Tetsushi Sakai Semiconductor devices and method of manufacturing the same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60218873A (ja) * 1984-04-13 1985-11-01 Rohm Co Ltd 半導体装置の製造方法
JPS60257168A (ja) * 1984-05-28 1985-12-18 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン 半導体装置の製造方法
JPS61136267A (ja) * 1984-12-07 1986-06-24 Nec Corp バイポ−ラ半導体装置
JPH02197133A (ja) * 1988-08-31 1990-08-03 Nec Yamagata Ltd 半導体装置の製造方法
JPH03173134A (ja) * 1989-11-30 1991-07-26 Canon Inc 半導体装置及び電子装置

Also Published As

Publication number Publication date
DE3064143D1 (en) 1983-08-18
EP0029887B1 (de) 1983-07-13
EP0029887A1 (de) 1981-06-10
JPS6325508B2 (OSRAM) 1988-05-25

Similar Documents

Publication Publication Date Title
JPS56147478A (en) Method of manufacturing npn bipolar transistor
JPS5694777A (en) Method of manufacturing semiconductor
JPS56110261A (en) Method of manufacturing bipolar transistor
DE3063331D1 (en) Method of making bipolar transistors
YU162080A (en) Method of manufacturing reinforced-concrete-plates
JPS5696868A (en) Method of manufacturing semiconductor device
JPS55154771A (en) Method of forming field effect transistor
JPS55103780A (en) Method of manufacturing piezooelectric film
JPS5693366A (en) Method of manufacturing semiconductor device
JPS5625404A (en) Method of molding pottern
JPS566497A (en) Method of manufacturing integrated circuit
JPS5680162A (en) Method of manufacturing pnp transistor
JPS5658246A (en) Method of manufacturing semiconductor device
JPS5621373A (en) Method of manufacturing vvmos transistor
JPS56146274A (en) Method of manufacturing bipolar transistor
JPS55160425A (en) Method of manufacturing multiistage semiconductor device
JPS55134981A (en) Method of manufacturing semiconductor device
GB2042259B (en) Lateral pnp transistor
JPS5688318A (en) Method of manufacturing semiconductor device
JPS5667974A (en) Method of manufacturing semiconductor device
JPS5693304A (en) Method of manufacturing resistor
JPS5679818A (en) Method of manufacturing pushhbutton unit
DE3064082D1 (en) Method of making a semiconductor device including complementary transistors
JPS5630766A (en) Method of manufacturing semiconductor device
JPS55120101A (en) Method of manufacturing chip resistor