JPS63244847A - ドライエッチング終点検出方法 - Google Patents

ドライエッチング終点検出方法

Info

Publication number
JPS63244847A
JPS63244847A JP62078809A JP7880987A JPS63244847A JP S63244847 A JPS63244847 A JP S63244847A JP 62078809 A JP62078809 A JP 62078809A JP 7880987 A JP7880987 A JP 7880987A JP S63244847 A JPS63244847 A JP S63244847A
Authority
JP
Japan
Prior art keywords
etching
end point
basic data
dry etching
time
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62078809A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0533818B2 (enExample
Inventor
Yukihito Tashiro
征仁 田代
Isao Asaishi
浅石　勲
Yutaka Nogami
裕 野上
Tsutomu Tsukada
勉 塚田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anelva Corp filed Critical Anelva Corp
Priority to JP62078809A priority Critical patent/JPS63244847A/ja
Publication of JPS63244847A publication Critical patent/JPS63244847A/ja
Publication of JPH0533818B2 publication Critical patent/JPH0533818B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
JP62078809A 1987-03-31 1987-03-31 ドライエッチング終点検出方法 Granted JPS63244847A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62078809A JPS63244847A (ja) 1987-03-31 1987-03-31 ドライエッチング終点検出方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62078809A JPS63244847A (ja) 1987-03-31 1987-03-31 ドライエッチング終点検出方法

Publications (2)

Publication Number Publication Date
JPS63244847A true JPS63244847A (ja) 1988-10-12
JPH0533818B2 JPH0533818B2 (enExample) 1993-05-20

Family

ID=13672170

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62078809A Granted JPS63244847A (ja) 1987-03-31 1987-03-31 ドライエッチング終点検出方法

Country Status (1)

Country Link
JP (1) JPS63244847A (enExample)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04229620A (ja) * 1990-05-24 1992-08-19 Applied Materials Inc 多チャンネル・プラズマ放電終点検出システム及び方法
JPH0544065A (ja) * 1991-08-09 1993-02-23 Ashida:Kk 電極のエツチング状態検出方法とその装置
US5261998A (en) * 1991-09-26 1993-11-16 Kabushiki Kaisha Toshiba Method for detecting an end point of etching in semiconductor manufacture using the emission spectrum of helium
US5308414A (en) * 1992-12-23 1994-05-03 International Business Machines Corporation Method and apparatus for optical emission end point detection in plasma etching processes
US5348614A (en) * 1993-06-22 1994-09-20 Lsi Logic Corporation Process for dynamic control of the concentration of one or more reactants in a plasma-enhanced process for formation of integrated circuit structures
FR2719120A1 (fr) * 1994-04-22 1995-10-27 Innovatique Sa Procédé et dispositif pour la détermination et le contrôle de la composition du mélange gazeux réactif agissant sur un substrat au cours d'un traitement physico-chimique sous atmosphère rarefiée.
JPH11509685A (ja) * 1995-06-30 1999-08-24 ラム リサーチ コーポレーション プラズマエッチングにおける最適終結点検出方法およびその装置
US6903826B2 (en) 2001-09-06 2005-06-07 Hitachi, Ltd. Method and apparatus for determining endpoint of semiconductor element fabricating process
JP2008102104A (ja) * 2006-10-20 2008-05-01 Toyota Central R&D Labs Inc 表面前処理方法及び表面前処理装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6153728A (ja) * 1984-08-24 1986-03-17 Hitachi Ltd エツチング終点判定方法
JPS6293943A (ja) * 1985-10-21 1987-04-30 Hitachi Ltd 終点検出方法および装置
JPS6393115A (ja) * 1986-10-08 1988-04-23 Hitachi Ltd 終点判定方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6153728A (ja) * 1984-08-24 1986-03-17 Hitachi Ltd エツチング終点判定方法
JPS6293943A (ja) * 1985-10-21 1987-04-30 Hitachi Ltd 終点検出方法および装置
JPS6393115A (ja) * 1986-10-08 1988-04-23 Hitachi Ltd 終点判定方法

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04229620A (ja) * 1990-05-24 1992-08-19 Applied Materials Inc 多チャンネル・プラズマ放電終点検出システム及び方法
JPH0544065A (ja) * 1991-08-09 1993-02-23 Ashida:Kk 電極のエツチング状態検出方法とその装置
US5261998A (en) * 1991-09-26 1993-11-16 Kabushiki Kaisha Toshiba Method for detecting an end point of etching in semiconductor manufacture using the emission spectrum of helium
US5308414A (en) * 1992-12-23 1994-05-03 International Business Machines Corporation Method and apparatus for optical emission end point detection in plasma etching processes
US5348614A (en) * 1993-06-22 1994-09-20 Lsi Logic Corporation Process for dynamic control of the concentration of one or more reactants in a plasma-enhanced process for formation of integrated circuit structures
US5500076A (en) * 1993-06-22 1996-03-19 Lsi Logic Corporation Process for dynamic control of the concentration of one or more etchants in a plasma-enhanced etch process for formation of patterned layers of conductive material on integrated circuit structures
FR2719120A1 (fr) * 1994-04-22 1995-10-27 Innovatique Sa Procédé et dispositif pour la détermination et le contrôle de la composition du mélange gazeux réactif agissant sur un substrat au cours d'un traitement physico-chimique sous atmosphère rarefiée.
JPH11509685A (ja) * 1995-06-30 1999-08-24 ラム リサーチ コーポレーション プラズマエッチングにおける最適終結点検出方法およびその装置
KR100454348B1 (ko) * 1995-06-30 2004-12-17 램 리서치 코포레이션 플라즈마에칭공정의최적종료점의검출을위한개선된방법및장치
US6903826B2 (en) 2001-09-06 2005-06-07 Hitachi, Ltd. Method and apparatus for determining endpoint of semiconductor element fabricating process
US7126697B2 (en) 2001-09-06 2006-10-24 Hitachi, Ltd. Method and apparatus for determining endpoint of semiconductor element fabricating process
JP2008102104A (ja) * 2006-10-20 2008-05-01 Toyota Central R&D Labs Inc 表面前処理方法及び表面前処理装置

Also Published As

Publication number Publication date
JPH0533818B2 (enExample) 1993-05-20

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