JPS63242991A - 結晶径制御方法 - Google Patents

結晶径制御方法

Info

Publication number
JPS63242991A
JPS63242991A JP62078387A JP7838787A JPS63242991A JP S63242991 A JPS63242991 A JP S63242991A JP 62078387 A JP62078387 A JP 62078387A JP 7838787 A JP7838787 A JP 7838787A JP S63242991 A JPS63242991 A JP S63242991A
Authority
JP
Japan
Prior art keywords
crystal
diameter
crucible
crystal diameter
melt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62078387A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0438719B2 (cg-RX-API-DMAC7.html
Inventor
Nobuo Katsuoka
信生 勝岡
Yoshihiro Hirano
好宏 平野
Atsushi Ozaki
篤志 尾崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin-Etsu Handotai Co Ltd
Original Assignee
Shin-Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin-Etsu Handotai Co Ltd filed Critical Shin-Etsu Handotai Co Ltd
Priority to JP62078387A priority Critical patent/JPS63242991A/ja
Priority to DE8888104931T priority patent/DE3872290T2/de
Priority to EP88104931A priority patent/EP0285943B1/en
Priority to US07/174,583 priority patent/US4973377A/en
Publication of JPS63242991A publication Critical patent/JPS63242991A/ja
Publication of JPH0438719B2 publication Critical patent/JPH0438719B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP62078387A 1987-03-31 1987-03-31 結晶径制御方法 Granted JPS63242991A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP62078387A JPS63242991A (ja) 1987-03-31 1987-03-31 結晶径制御方法
DE8888104931T DE3872290T2 (de) 1987-03-31 1988-03-26 Verfahren zur regelung des kristalldurchmessers.
EP88104931A EP0285943B1 (en) 1987-03-31 1988-03-26 Crystal diameter controlling method
US07/174,583 US4973377A (en) 1987-03-31 1988-03-28 Crystal diameter controlling method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62078387A JPS63242991A (ja) 1987-03-31 1987-03-31 結晶径制御方法

Publications (2)

Publication Number Publication Date
JPS63242991A true JPS63242991A (ja) 1988-10-07
JPH0438719B2 JPH0438719B2 (cg-RX-API-DMAC7.html) 1992-06-25

Family

ID=13660604

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62078387A Granted JPS63242991A (ja) 1987-03-31 1987-03-31 結晶径制御方法

Country Status (4)

Country Link
US (1) US4973377A (cg-RX-API-DMAC7.html)
EP (1) EP0285943B1 (cg-RX-API-DMAC7.html)
JP (1) JPS63242991A (cg-RX-API-DMAC7.html)
DE (1) DE3872290T2 (cg-RX-API-DMAC7.html)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5215620A (en) * 1989-09-19 1993-06-01 Shin-Etsu Handotai Co. Ltd. Method for pulling a silicon single crystal by imposing a periodic rotation rate on a constant rotation rate
US5269875A (en) * 1989-10-05 1993-12-14 Shin-Etsu Handotai Company, Limited Method of adjusting concentration of oxygen in silicon single crystal and apparatus for use in the method
JPH0777999B2 (ja) * 1989-11-24 1995-08-23 信越半導体株式会社 アンチモンドープ単結晶シリコンの育成方法
JP2601930B2 (ja) * 1990-03-29 1997-04-23 信越半導体株式会社 単結晶ネツク部直径制御方法及び装置
FI911856A7 (fi) * 1990-04-27 1991-10-28 Nippon Kokan Kk Foerfarande och apparat foer bestaemning av diametern hos en enskild silikonkristall.
FI911857A7 (fi) * 1990-04-27 1991-10-28 Nippon Kokan Kk Foerfarande och apparat foer kontroll av diametern hos en enskild silikonkristall.
JPH0663824B2 (ja) * 1990-04-29 1994-08-22 信越半導体株式会社 湯面振動測定方法及び装置
JPH0431386A (ja) * 1990-05-25 1992-02-03 Shin Etsu Handotai Co Ltd 半導体単結晶引上方法
JP2546736B2 (ja) * 1990-06-21 1996-10-23 信越半導体株式会社 シリコン単結晶引上方法
JPH0777996B2 (ja) * 1990-10-12 1995-08-23 信越半導体株式会社 コーン部育成制御方法及び装置
JPH0785489B2 (ja) * 1991-02-08 1995-09-13 信越半導体株式会社 単結晶の直径計測方法
US5178720A (en) * 1991-08-14 1993-01-12 Memc Electronic Materials, Inc. Method for controlling oxygen content of silicon crystals using a combination of cusp magnetic field and crystal and crucible rotation rates
US5501172A (en) * 1994-03-11 1996-03-26 Shin-Etsu Handotai Co., Ltd. Method of growing silicon single crystals
JP2966322B2 (ja) * 1995-02-27 1999-10-25 三菱マテリアルシリコン株式会社 シリコン単結晶インゴット及びその製造方法
US6226032B1 (en) * 1996-07-16 2001-05-01 General Signal Corporation Crystal diameter control system
US5968263A (en) * 1998-04-01 1999-10-19 Memc Electronic Materials, Inc. Open-loop method and system for controlling growth of semiconductor crystal
JP4567192B2 (ja) 1998-06-26 2010-10-20 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 結晶成長装置用電気抵抗ヒータ及びその使用方法
US6241818B1 (en) 1999-04-07 2001-06-05 Memc Electronic Materials, Inc. Method and system of controlling taper growth in a semiconductor crystal growth process
US6285011B1 (en) 1999-10-12 2001-09-04 Memc Electronic Materials, Inc. Electrical resistance heater for crystal growing apparatus
US6203611B1 (en) 1999-10-19 2001-03-20 Memc Electronic Materials, Inc. Method of controlling growth of a semiconductor crystal to automatically transition from taper growth to target diameter growth
US6663709B2 (en) 2001-06-26 2003-12-16 Memc Electronic Materials, Inc. Crystal puller and method for growing monocrystalline silicon ingots
KR101881380B1 (ko) * 2017-02-06 2018-07-24 에스케이실트론 주식회사 단결정 잉곳 성장 방법
CN115852476A (zh) * 2022-12-22 2023-03-28 江苏协鑫硅材料科技发展有限公司 晶体生长装置的控制方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3621213A (en) * 1969-11-26 1971-11-16 Ibm Programmed digital-computer-controlled system for automatic growth of semiconductor crystals
US4511428A (en) * 1982-07-09 1985-04-16 International Business Machines Corporation Method of controlling oxygen content and distribution in grown silicon crystals
JPS59102896A (ja) * 1982-11-30 1984-06-14 Toshiba Corp 単結晶の形状制御方法
JPS59116189A (ja) * 1982-12-22 1984-07-04 Toshiba Corp 単結晶形状制御方法
JPS6033299A (ja) * 1983-07-29 1985-02-20 Toshiba Corp 単結晶の製造装置
US4710258A (en) * 1984-11-30 1987-12-01 General Signal Corporation System for controlling the diameter of a crystal in a crystal growing furnace
JPH0649631B2 (ja) * 1986-10-29 1994-06-29 信越半導体株式会社 結晶径測定装置

Also Published As

Publication number Publication date
EP0285943A1 (en) 1988-10-12
DE3872290D1 (de) 1992-07-30
EP0285943B1 (en) 1992-06-24
US4973377A (en) 1990-11-27
DE3872290T2 (de) 1993-02-11
JPH0438719B2 (cg-RX-API-DMAC7.html) 1992-06-25

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