JPS6323666B2 - - Google Patents
Info
- Publication number
- JPS6323666B2 JPS6323666B2 JP58038166A JP3816683A JPS6323666B2 JP S6323666 B2 JPS6323666 B2 JP S6323666B2 JP 58038166 A JP58038166 A JP 58038166A JP 3816683 A JP3816683 A JP 3816683A JP S6323666 B2 JPS6323666 B2 JP S6323666B2
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- compound semiconductor
- active region
- mask
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 21
- 150000001875 compounds Chemical class 0.000 claims description 20
- 230000005669 field effect Effects 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 7
- 239000010410 layer Substances 0.000 claims 3
- 238000000151 deposition Methods 0.000 claims 1
- 239000002344 surface layer Substances 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 29
- 230000000694 effects Effects 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3816683A JPS59165461A (ja) | 1983-03-10 | 1983-03-10 | ショットキ接合形化合物半導体電界効果トランジスタの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3816683A JPS59165461A (ja) | 1983-03-10 | 1983-03-10 | ショットキ接合形化合物半導体電界効果トランジスタの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59165461A JPS59165461A (ja) | 1984-09-18 |
| JPS6323666B2 true JPS6323666B2 (fr) | 1988-05-17 |
Family
ID=12517812
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3816683A Granted JPS59165461A (ja) | 1983-03-10 | 1983-03-10 | ショットキ接合形化合物半導体電界効果トランジスタの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59165461A (fr) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3509963A1 (de) * | 1985-03-20 | 1986-09-25 | Standard Elektrik Lorenz Ag, 7000 Stuttgart | Junction-feldeffekttransistor mit selbstjustierendem gate |
| JPH0758715B2 (ja) * | 1985-08-14 | 1995-06-21 | 日本電気株式会社 | 電界効果トランジスタの製造方法 |
| JPH0758716B2 (ja) * | 1985-09-10 | 1995-06-21 | 松下電器産業株式会社 | 電界効果トランジスタの製造方法 |
| KR100434698B1 (ko) | 2001-09-05 | 2004-06-07 | 주식회사 하이닉스반도체 | 반도체소자의 선택적 에피성장법 |
| KR100455725B1 (ko) | 2001-10-08 | 2004-11-12 | 주식회사 하이닉스반도체 | 반도체소자의 플러그 형성방법 |
| KR100455724B1 (ko) | 2001-10-08 | 2004-11-12 | 주식회사 하이닉스반도체 | 반도체소자의 플러그 형성방법 |
| KR100431295B1 (ko) | 2001-10-12 | 2004-05-12 | 주식회사 하이닉스반도체 | 반도체소자의 플러그 형성방법 |
| JP2017527988A (ja) * | 2014-08-13 | 2017-09-21 | インテル・コーポレーション | 自己整合ゲートラストｉｉｉ−ｎトランジスタ |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5039879A (fr) * | 1973-08-13 | 1975-04-12 | ||
| JPS57133682A (en) * | 1980-12-24 | 1982-08-18 | Philips Nv | Method of producing field effect transistor |
-
1983
- 1983-03-10 JP JP3816683A patent/JPS59165461A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5039879A (fr) * | 1973-08-13 | 1975-04-12 | ||
| JPS57133682A (en) * | 1980-12-24 | 1982-08-18 | Philips Nv | Method of producing field effect transistor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59165461A (ja) | 1984-09-18 |
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