JPS6122873B2 - - Google Patents
Info
- Publication number
- JPS6122873B2 JPS6122873B2 JP15511278A JP15511278A JPS6122873B2 JP S6122873 B2 JPS6122873 B2 JP S6122873B2 JP 15511278 A JP15511278 A JP 15511278A JP 15511278 A JP15511278 A JP 15511278A JP S6122873 B2 JPS6122873 B2 JP S6122873B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- junction
- gate electrode
- mask
- active layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 48
- 238000005530 etching Methods 0.000 claims description 25
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims 1
- 230000005669 field effect Effects 0.000 description 25
- 238000000034 method Methods 0.000 description 18
- 239000000463 material Substances 0.000 description 12
- 238000009792 diffusion process Methods 0.000 description 11
- 230000015556 catabolic process Effects 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 238000005468 ion implantation Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15511278A JPS5582469A (en) | 1978-12-14 | 1978-12-14 | Preparation of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15511278A JPS5582469A (en) | 1978-12-14 | 1978-12-14 | Preparation of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5582469A JPS5582469A (en) | 1980-06-21 |
| JPS6122873B2 true JPS6122873B2 (fr) | 1986-06-03 |
Family
ID=15598847
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15511278A Granted JPS5582469A (en) | 1978-12-14 | 1978-12-14 | Preparation of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5582469A (fr) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59213171A (ja) * | 1983-05-19 | 1984-12-03 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
| JPH0793323B2 (ja) * | 1986-01-23 | 1995-10-09 | 住友電気工業株式会社 | 電界効果トランジスタ |
| JPH0815159B2 (ja) * | 1986-09-22 | 1996-02-14 | 株式会社日立製作所 | 半導体装置の製造方法 |
| JPH01154565A (ja) * | 1987-12-10 | 1989-06-16 | Fujitsu Ltd | ジャンクションｆｅｔの製造方法 |
| JPH01154564A (ja) * | 1987-12-10 | 1989-06-16 | Fujitsu Ltd | ジャンクションｆｅｔの製造方法 |
-
1978
- 1978-12-14 JP JP15511278A patent/JPS5582469A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5582469A (en) | 1980-06-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4984036A (en) | Field effect transistor with multiple grooves | |
| US4351099A (en) | Method of making FET utilizing shadow masking and diffusion from a doped oxide | |
| US4327475A (en) | Method of manufacturing a FET device disposed in a compound s/c layer on a semi-insulating substrate | |
| US5397907A (en) | Field effect transistor and fabricating method thereof | |
| JPH0358177B2 (fr) | ||
| US4077111A (en) | Self-aligned gate field effect transistor and method for making same | |
| JPH0624209B2 (ja) | 二重凹部電界効果トランジスタを形成する方法 | |
| JPS6122873B2 (fr) | ||
| KR0161201B1 (ko) | T형 게이트와 자기정렬 ldd 구조를 갖는 전계효과 트랜지스터의 제조방법 | |
| US5483089A (en) | Electrically isolated MESFET | |
| CA1271850A (fr) | Methode de fabrication de transistors a effet de champ a grille a auto-alignement | |
| US5274257A (en) | Floating channel field effect transistor and a fabricating method thereof | |
| US5389807A (en) | Field effect transistor | |
| JP2664527B2 (ja) | 半導体装置 | |
| US4458259A (en) | Etched-source static induction transistor | |
| JPS6323668B2 (fr) | ||
| JPS6332273B2 (fr) | ||
| JPS6034073A (ja) | ショットキ−ゲ−ト型電界効果トランジスタの製造方法 | |
| JPH02262342A (ja) | 半導体装置の製造方法 | |
| JP3038720B2 (ja) | 電界効果トランジスタの製造方法 | |
| JP3035969B2 (ja) | 化合物半導体装置の製造方法 | |
| JPS60100472A (ja) | 電界効果トランジスタ | |
| JPS59172776A (ja) | 半導体装置の製造方法 | |
| JPS5910591B2 (ja) | 電界効果トランジスタの製造方法 | |
| JPS5850434B2 (ja) | 電界効果トランジスタの製造方法 |