JPS6323324A - ドライエツチング装置 - Google Patents

ドライエツチング装置

Info

Publication number
JPS6323324A
JPS6323324A JP16857686A JP16857686A JPS6323324A JP S6323324 A JPS6323324 A JP S6323324A JP 16857686 A JP16857686 A JP 16857686A JP 16857686 A JP16857686 A JP 16857686A JP S6323324 A JPS6323324 A JP S6323324A
Authority
JP
Japan
Prior art keywords
etching
optical path
path difference
light
dry etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16857686A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0518454B2 (enExample
Inventor
Ryohei Kawabata
川端　良平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP16857686A priority Critical patent/JPS6323324A/ja
Publication of JPS6323324A publication Critical patent/JPS6323324A/ja
Publication of JPH0518454B2 publication Critical patent/JPH0518454B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
JP16857686A 1986-07-16 1986-07-16 ドライエツチング装置 Granted JPS6323324A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16857686A JPS6323324A (ja) 1986-07-16 1986-07-16 ドライエツチング装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16857686A JPS6323324A (ja) 1986-07-16 1986-07-16 ドライエツチング装置

Publications (2)

Publication Number Publication Date
JPS6323324A true JPS6323324A (ja) 1988-01-30
JPH0518454B2 JPH0518454B2 (enExample) 1993-03-12

Family

ID=15870608

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16857686A Granted JPS6323324A (ja) 1986-07-16 1986-07-16 ドライエツチング装置

Country Status (1)

Country Link
JP (1) JPS6323324A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002526918A (ja) * 1998-09-30 2002-08-20 ラム リサーチ コーポレーション プラズマ・エッチング工程の精度を改善する方法および装置
JP2004006742A (ja) * 2002-03-25 2004-01-08 Adaptive Plasma Technology Corp 半導体製造用プラズマエッチング法およびその装置
JP2006518913A (ja) * 2003-02-14 2006-08-17 ユナクシス・ユーエスエイ・インコーポレーテッド 時分割多重化エッチプロセスにおける終点検出
JP2017092116A (ja) * 2015-11-04 2017-05-25 株式会社日立ハイテクノロジーズ プラズマ処理装置及び処理状態検出方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57117251A (en) * 1980-12-31 1982-07-21 Ibm Device for monitoring thickness change
JPS61152017A (ja) * 1984-12-26 1986-07-10 Hitachi Ltd エツチングモニタ装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57117251A (en) * 1980-12-31 1982-07-21 Ibm Device for monitoring thickness change
JPS61152017A (ja) * 1984-12-26 1986-07-10 Hitachi Ltd エツチングモニタ装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002526918A (ja) * 1998-09-30 2002-08-20 ラム リサーチ コーポレーション プラズマ・エッチング工程の精度を改善する方法および装置
JP2004006742A (ja) * 2002-03-25 2004-01-08 Adaptive Plasma Technology Corp 半導体製造用プラズマエッチング法およびその装置
JP2006518913A (ja) * 2003-02-14 2006-08-17 ユナクシス・ユーエスエイ・インコーポレーテッド 時分割多重化エッチプロセスにおける終点検出
JP2017092116A (ja) * 2015-11-04 2017-05-25 株式会社日立ハイテクノロジーズ プラズマ処理装置及び処理状態検出方法

Also Published As

Publication number Publication date
JPH0518454B2 (enExample) 1993-03-12

Similar Documents

Publication Publication Date Title
JP4938948B2 (ja) プラズマプロセス中のプロセスパラメータを決定するためのプロセスモニタおよびその方法
JP3429137B2 (ja) トレンチ形成プロセスのリアルタイム現場監視のための方法
US10746531B2 (en) Wear amount measuring apparatus and method, temperature measuring apparatus and method and substrate processing system
EP0735565B1 (en) Method and apparatus for monitoring the dry etching of a dielectric film to a given thickness
JP4925507B2 (ja) スペクトル干渉法を用いる膜厚制御
EP0443322B1 (en) Method and apparatus for measuring the thickness of a coating
JPH08316279A (ja) 半導体基体の厚さ測定方法及びその測定装置
CN101294795A (zh) 测量薄膜厚度的装置和方法
KR20040071146A (ko) 반도체 웨이퍼의 응력 측정 방법 및 장치
JPH0546095B2 (enExample)
US4569592A (en) Plasma monitor
TWI758478B (zh) 研磨裝置及研磨方法
WO2009094922A1 (en) A monitoring system and method of semiconductor process
JPS62190728A (ja) エツチング終点モニタ法および装置
JPS6323324A (ja) ドライエツチング装置
KR101487519B1 (ko) 플라즈마 공정챔버
KR20030000274A (ko) 반도체 제조공정에서 실시간 플라즈마 측정과 박막분석을위한 다채널 분광분석기
WO2003081293A3 (en) Improved semiconductor etching process control
JP4474795B2 (ja) 膜厚測定方法、測定装置及び半導体装置の製造方法
JPH0271517A (ja) エッチング装置
JPS61152017A (ja) エツチングモニタ装置
JPH1062129A (ja) 膜厚測定方法
KR100733120B1 (ko) 반도체 웨이퍼처리의 검출방법 및 검출장치
JPH04280650A (ja) 半導体装置の製造方法
JPS5846640A (ja) プラズマ分布モニタ装置