JPS6322610B2 - - Google Patents

Info

Publication number
JPS6322610B2
JPS6322610B2 JP56150244A JP15024481A JPS6322610B2 JP S6322610 B2 JPS6322610 B2 JP S6322610B2 JP 56150244 A JP56150244 A JP 56150244A JP 15024481 A JP15024481 A JP 15024481A JP S6322610 B2 JPS6322610 B2 JP S6322610B2
Authority
JP
Japan
Prior art keywords
substrate
chamber
storage chamber
main surface
electron beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56150244A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5850737A (ja
Inventor
Hayaaki Fukumoto
Hideaki Arima
Tadashi Nishimura
Masahiro Yoneda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP56150244A priority Critical patent/JPS5850737A/ja
Publication of JPS5850737A publication Critical patent/JPS5850737A/ja
Publication of JPS6322610B2 publication Critical patent/JPS6322610B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Drying Of Semiconductors (AREA)
  • Tests Of Electronic Circuits (AREA)
JP56150244A 1981-09-21 1981-09-21 半導体素子の製造装置 Granted JPS5850737A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56150244A JPS5850737A (ja) 1981-09-21 1981-09-21 半導体素子の製造装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56150244A JPS5850737A (ja) 1981-09-21 1981-09-21 半導体素子の製造装置

Publications (2)

Publication Number Publication Date
JPS5850737A JPS5850737A (ja) 1983-03-25
JPS6322610B2 true JPS6322610B2 (enrdf_load_stackoverflow) 1988-05-12

Family

ID=15492706

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56150244A Granted JPS5850737A (ja) 1981-09-21 1981-09-21 半導体素子の製造装置

Country Status (1)

Country Link
JP (1) JPS5850737A (enrdf_load_stackoverflow)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59232413A (ja) * 1983-06-16 1984-12-27 Toshiba Corp 半導体装置の製造方法及びその製造装置
JPS60216549A (ja) * 1984-04-12 1985-10-30 Fuji Electric Corp Res & Dev Ltd 半導体装置の製造方法
JPS60216555A (ja) * 1984-04-12 1985-10-30 Fuji Electric Corp Res & Dev Ltd 半導体装置の製造方法
JPH0638411B2 (ja) * 1984-04-26 1994-05-18 工業技術院長 電子ビ−ムによるパタ−ン形成法
JPH0712033B2 (ja) * 1984-05-10 1995-02-08 工業技術院長 イオンビ−ムによる微細パタ−ン形成法
JPS6137152A (ja) * 1984-07-31 1986-02-22 小木曾　誠 義歯維持用インプラント
JPS61179573A (ja) * 1985-02-04 1986-08-12 Agency Of Ind Science & Technol プレ−ナ型半導体装置
JPH0634795B2 (ja) * 1985-02-22 1994-05-11 京セラ株式会社 複合インプラントとその製造方法
JPS61248522A (ja) * 1985-04-26 1986-11-05 Mitsubishi Electric Corp 不純物層形成装置
JPS62156870A (ja) * 1985-12-28 1987-07-11 Matsushita Electronics Corp 固体撮像装置の製造方法
JPS63147455A (ja) * 1986-12-11 1988-06-20 株式会社神戸製鋼所 複合インプラント部材
JPH07260698A (ja) * 1994-03-18 1995-10-13 Sony Corp 異物検査装置及び異物検査方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51140560A (en) * 1975-05-30 1976-12-03 Hitachi Ltd Method of monitoring homoepitaxy film thickness
JPS54162452A (en) * 1978-06-13 1979-12-24 Mitsubishi Electric Corp Manufacture of semiconductor and its unit
JPS593540B2 (ja) * 1979-09-03 1984-01-24 三菱電機株式会社 窒化膜形成法
JPS5679438A (en) * 1979-12-04 1981-06-30 Toshiba Corp Working device for charged particle beam

Also Published As

Publication number Publication date
JPS5850737A (ja) 1983-03-25

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