JPS63217620A - プラズマ処理装置 - Google Patents

プラズマ処理装置

Info

Publication number
JPS63217620A
JPS63217620A JP62050090A JP5009087A JPS63217620A JP S63217620 A JPS63217620 A JP S63217620A JP 62050090 A JP62050090 A JP 62050090A JP 5009087 A JP5009087 A JP 5009087A JP S63217620 A JPS63217620 A JP S63217620A
Authority
JP
Japan
Prior art keywords
substrate
plasma
processed
film
plasma processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62050090A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0556855B2 (enExample
Inventor
Takuya Fukuda
福田　琢也
Yasuhiro Mochizuki
康弘 望月
Naohiro Monma
直弘 門馬
Shigeru Takahashi
茂 高橋
Noboru Suzuki
登 鈴木
Tadashi Sonobe
園部　正
Atsushi Chiba
淳 千葉
Kazuo Suzuki
和夫 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Service Engineering Co Ltd
Hitachi Ltd
Original Assignee
Hitachi Service Engineering Co Ltd
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Service Engineering Co Ltd, Hitachi Ltd filed Critical Hitachi Service Engineering Co Ltd
Priority to JP62050090A priority Critical patent/JPS63217620A/ja
Priority to EP88100672A priority patent/EP0275965B1/en
Priority to US07/145,371 priority patent/US4876983A/en
Priority to DE3853890T priority patent/DE3853890T2/de
Priority to KR1019880000369A priority patent/KR960015609B1/ko
Publication of JPS63217620A publication Critical patent/JPS63217620A/ja
Publication of JPH0556855B2 publication Critical patent/JPH0556855B2/ja
Priority to US08/131,519 priority patent/US5433788A/en
Granted legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
JP62050090A 1987-01-19 1987-03-06 プラズマ処理装置 Granted JPS63217620A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP62050090A JPS63217620A (ja) 1987-03-06 1987-03-06 プラズマ処理装置
EP88100672A EP0275965B1 (en) 1987-01-19 1988-01-19 Plasma operation apparatus
US07/145,371 US4876983A (en) 1987-01-19 1988-01-19 Plasma operation apparatus
DE3853890T DE3853890T2 (de) 1987-01-19 1988-01-19 Mit einem Plasma arbeitendes Gerät.
KR1019880000369A KR960015609B1 (ko) 1987-01-19 1988-01-19 플라즈마 처리장치 및 방법
US08/131,519 US5433788A (en) 1987-01-19 1993-10-04 Apparatus for plasma treatment using electron cyclotron resonance

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62050090A JPS63217620A (ja) 1987-03-06 1987-03-06 プラズマ処理装置

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP6158354A Division JP2703184B2 (ja) 1994-07-11 1994-07-11 プラズマ処理方法
JP15835594A Division JPH07161700A (ja) 1994-07-11 1994-07-11 プラズマ処理方法

Publications (2)

Publication Number Publication Date
JPS63217620A true JPS63217620A (ja) 1988-09-09
JPH0556855B2 JPH0556855B2 (enExample) 1993-08-20

Family

ID=12849345

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62050090A Granted JPS63217620A (ja) 1987-01-19 1987-03-06 プラズマ処理装置

Country Status (1)

Country Link
JP (1) JPS63217620A (enExample)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6436769A (en) * 1987-04-27 1989-02-07 Semiconductor Energy Lab Plasma treatment device
JPH0362517A (ja) * 1989-03-27 1991-03-18 Anelva Corp マイクロ波プラズマ処理装置
JPH03158471A (ja) * 1989-11-15 1991-07-08 Hitachi Ltd マイクロ波プラズマ処理装置
JPH0379421U (enExample) * 1989-12-01 1991-08-13
JPH03259517A (ja) * 1990-03-08 1991-11-19 Nec Corp Ｅｃｒプラズマエッチング方法
JPH0425022A (ja) * 1990-05-16 1992-01-28 Nec Corp マイクロ波プラズマエッチング装置及びその方法
JPH04103783A (ja) * 1990-08-22 1992-04-06 Nec Corp マイクロ波プラズマ処理装置
JPH0653170A (ja) * 1992-03-18 1994-02-25 Nec Corp Ｅｃｒプラズマエッチング装置
JPH08203693A (ja) * 1995-08-28 1996-08-09 Semiconductor Energy Lab Co Ltd 薄膜形成装置
US6066568A (en) * 1997-05-14 2000-05-23 Tokyo Electron Limited Plasma treatment method and system
JP2000299311A (ja) * 1991-04-04 2000-10-24 Hitachi Ltd プラズマ処理装置
JP2000299312A (ja) * 1991-04-04 2000-10-24 Hitachi Ltd プラズマ処理方法及び半導体装置の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56155535A (en) * 1980-05-02 1981-12-01 Nippon Telegr & Teleph Corp <Ntt> Film forming device utilizing plasma
JPS59136130A (ja) * 1983-01-24 1984-08-04 Hitachi Ltd マイクロ波プラズマによる膜形成装置
JPS60134423A (ja) * 1983-12-23 1985-07-17 Hitachi Ltd マイクロ波プラズマエツチング装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56155535A (en) * 1980-05-02 1981-12-01 Nippon Telegr & Teleph Corp <Ntt> Film forming device utilizing plasma
JPS59136130A (ja) * 1983-01-24 1984-08-04 Hitachi Ltd マイクロ波プラズマによる膜形成装置
JPS60134423A (ja) * 1983-12-23 1985-07-17 Hitachi Ltd マイクロ波プラズマエツチング装置

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6436769A (en) * 1987-04-27 1989-02-07 Semiconductor Energy Lab Plasma treatment device
US6838126B2 (en) 1987-04-27 2005-01-04 Semiconductor Energy Laboratory Co., Ltd. Method for forming I-carbon film
US6423383B1 (en) 1987-04-27 2002-07-23 Semiconductor Energy Laboratory Co., Ltd. Plasma processing apparatus and method
US5858259A (en) * 1987-04-27 1999-01-12 Semiconductor Energy Laboratory Co., Ltd. Plasma processing apparatus and method
US6217661B1 (en) 1987-04-27 2001-04-17 Semiconductor Energy Laboratory Co., Ltd. Plasma processing apparatus and method
JPH0362517A (ja) * 1989-03-27 1991-03-18 Anelva Corp マイクロ波プラズマ処理装置
JPH03158471A (ja) * 1989-11-15 1991-07-08 Hitachi Ltd マイクロ波プラズマ処理装置
JPH0379421U (enExample) * 1989-12-01 1991-08-13
JPH03259517A (ja) * 1990-03-08 1991-11-19 Nec Corp Ｅｃｒプラズマエッチング方法
JPH0425022A (ja) * 1990-05-16 1992-01-28 Nec Corp マイクロ波プラズマエッチング装置及びその方法
JPH04103783A (ja) * 1990-08-22 1992-04-06 Nec Corp マイクロ波プラズマ処理装置
JP2000299312A (ja) * 1991-04-04 2000-10-24 Hitachi Ltd プラズマ処理方法及び半導体装置の製造方法
JP2000299311A (ja) * 1991-04-04 2000-10-24 Hitachi Ltd プラズマ処理装置
JPH0653170A (ja) * 1992-03-18 1994-02-25 Nec Corp Ｅｃｒプラズマエッチング装置
JPH08203693A (ja) * 1995-08-28 1996-08-09 Semiconductor Energy Lab Co Ltd 薄膜形成装置
US6066568A (en) * 1997-05-14 2000-05-23 Tokyo Electron Limited Plasma treatment method and system

Also Published As

Publication number Publication date
JPH0556855B2 (enExample) 1993-08-20

Similar Documents

Publication Publication Date Title
US4876983A (en) Plasma operation apparatus
EP0584252B1 (en) A PROCESS FOR DEPOSITING A SIOx FILM HAVING REDUCED INTRINSIC STRESS AND/OR REDUCED HYDROGEN CONTENT
US9053909B2 (en) Activated gas injector, film deposition apparatus, and film deposition method
JPH0635323B2 (ja) 表面処理方法
JPS63217620A (ja) プラズマ処理装置
JP2965935B2 (ja) プラズマｃｖｄ方法
JPS621565B2 (enExample)
JP2003059918A (ja) プラズマ処理方法、プラズマ処理装置及び半導体装置の製造方法
JPH06244175A (ja) 絶縁膜の製造方法および製造装置
JP3093718B2 (ja) マイクロ波導入装置及び表面処理方法
JP3327618B2 (ja) プラズマ処理装置
JPH02308536A (ja) Ｅｃｒプラズマ装置とこれを用いた薄膜形成方法
US5897711A (en) Method and apparatus for improving refractive index of dielectric films
JPH029787A (ja) プラズマ処理装置
JP2660244B2 (ja) 表面処理方法
JPH0420985B2 (enExample)
JP2703184B2 (ja) プラズマ処理方法
JPH07161700A (ja) プラズマ処理方法
JP3071855B2 (ja) ダイヤモンド膜作製方法
JP3261514B2 (ja) 絶縁膜形成装置
JPH0777202B2 (ja) プラズマ処理装置
JPS59177919A (ja) 薄膜の選択成長法
JPH06280028A (ja) プラズマ処理方法及び装置
JP4782314B2 (ja) プラズマ源及び化合物薄膜作成装置
JPH0620978A (ja) グロー放電方法及びグロー放電装置