JPH0379421U - - Google Patents

Info

Publication number
JPH0379421U
JPH0379421U JP13867289U JP13867289U JPH0379421U JP H0379421 U JPH0379421 U JP H0379421U JP 13867289 U JP13867289 U JP 13867289U JP 13867289 U JP13867289 U JP 13867289U JP H0379421 U JPH0379421 U JP H0379421U
Authority
JP
Japan
Prior art keywords
plasma
generation chamber
plasma generation
ecr
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13867289U
Other languages
English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP13867289U priority Critical patent/JPH0379421U/ja
Publication of JPH0379421U publication Critical patent/JPH0379421U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Electron Sources, Ion Sources (AREA)
JP13867289U 1989-12-01 1989-12-01 Pending JPH0379421U (enExample)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13867289U JPH0379421U (enExample) 1989-12-01 1989-12-01

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13867289U JPH0379421U (enExample) 1989-12-01 1989-12-01

Publications (1)

Publication Number Publication Date
JPH0379421U true JPH0379421U (enExample) 1991-08-13

Family

ID=31685756

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13867289U Pending JPH0379421U (enExample) 1989-12-01 1989-12-01

Country Status (1)

Country Link
JP (1) JPH0379421U (enExample)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6380523A (ja) * 1986-09-24 1988-04-11 Matsushita Electric Ind Co Ltd マイクロ波プラズマ処理装置
JPS63137168A (ja) * 1986-11-29 1988-06-09 Hitachi Ltd マイクロ波プラズマ処理装置
JPS63182822A (ja) * 1987-01-26 1988-07-28 Hitachi Ltd マイクロ波プラズマ処理装置
JPS63217620A (ja) * 1987-03-06 1988-09-09 Hitachi Ltd プラズマ処理装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6380523A (ja) * 1986-09-24 1988-04-11 Matsushita Electric Ind Co Ltd マイクロ波プラズマ処理装置
JPS63137168A (ja) * 1986-11-29 1988-06-09 Hitachi Ltd マイクロ波プラズマ処理装置
JPS63182822A (ja) * 1987-01-26 1988-07-28 Hitachi Ltd マイクロ波プラズマ処理装置
JPS63217620A (ja) * 1987-03-06 1988-09-09 Hitachi Ltd プラズマ処理装置

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