JPS63201334U - - Google Patents

Info

Publication number
JPS63201334U
JPS63201334U JP9198087U JP9198087U JPS63201334U JP S63201334 U JPS63201334 U JP S63201334U JP 9198087 U JP9198087 U JP 9198087U JP 9198087 U JP9198087 U JP 9198087U JP S63201334 U JPS63201334 U JP S63201334U
Authority
JP
Japan
Prior art keywords
resin
semiconductor device
thin semiconductor
sealing
view
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9198087U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP9198087U priority Critical patent/JPS63201334U/ja
Publication of JPS63201334U publication Critical patent/JPS63201334U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案の実施例を示す薄形半導体装置
の平面図、第2図はその半導体装置のバンプ電極
の側面図、第3図は本考案の半導体装置の樹脂封
止状態を示す平面図、第4図は第3図の−線
断面図、第5図は従来の半導体装置の封止樹脂未
充填状態を示す平面図、第6図は従来の半導体装
置の封止樹脂過剰状態を示す平面図、第7図は第
6図の−線断面図である。 11……半導体素子、12……バンプ電極、1
3……ダミーバンプ電極、14…接続端子、15
……封止樹脂。
FIG. 1 is a plan view of a thin semiconductor device showing an embodiment of the present invention, FIG. 2 is a side view of a bump electrode of the semiconductor device, and FIG. 3 is a plane view showing the resin-sealed state of the semiconductor device of the present invention. 4 is a sectional view taken along the line -- in FIG. 3, FIG. 5 is a plan view showing a conventional semiconductor device in a state where the sealing resin is not filled, and FIG. 6 is a plan view showing a state in which the conventional semiconductor device is filled with sealing resin. The plan view shown in FIG. 7 is a sectional view taken along the - line in FIG. 6. 11...Semiconductor element, 12...Bump electrode, 1
3...Dummy bump electrode, 14...Connection terminal, 15
...Sealing resin.

Claims (1)

【実用新案登録請求の範囲】 (1) 半導体素子の表面四隅にダミーバンプ電極
を設け樹脂封止するようにしたことを特徴とする
薄形半導体装置。 (2) 前記封止を行う樹脂はエポキシ樹脂である
ことを特徴とする実用新案登録請求の範囲第1項
記載の薄形半導体装置。 (3) 前記封止を行う樹脂はシリコン樹脂である
ことを特徴とする実用新案登録請求の範囲第1項
記載の薄形半導体装置。
[Claims for Utility Model Registration] (1) A thin semiconductor device characterized in that dummy bump electrodes are provided at the four corners of the surface of a semiconductor element and sealed with resin. (2) The thin semiconductor device according to claim 1, wherein the resin for sealing is an epoxy resin. (3) The thin semiconductor device according to claim 1, wherein the resin for sealing is silicone resin.
JP9198087U 1987-06-17 1987-06-17 Pending JPS63201334U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9198087U JPS63201334U (en) 1987-06-17 1987-06-17

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9198087U JPS63201334U (en) 1987-06-17 1987-06-17

Publications (1)

Publication Number Publication Date
JPS63201334U true JPS63201334U (en) 1988-12-26

Family

ID=30953260

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9198087U Pending JPS63201334U (en) 1987-06-17 1987-06-17

Country Status (1)

Country Link
JP (1) JPS63201334U (en)

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