JPS63190133A - 窒化アルミニウム焼結体およびその製造方法 - Google Patents
窒化アルミニウム焼結体およびその製造方法Info
- Publication number
- JPS63190133A JPS63190133A JP62021495A JP2149587A JPS63190133A JP S63190133 A JPS63190133 A JP S63190133A JP 62021495 A JP62021495 A JP 62021495A JP 2149587 A JP2149587 A JP 2149587A JP S63190133 A JPS63190133 A JP S63190133A
- Authority
- JP
- Japan
- Prior art keywords
- aluminum nitride
- weight
- sintered body
- parts
- elements
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims description 50
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 150000001875 compounds Chemical class 0.000 claims abstract description 13
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 13
- 239000000843 powder Substances 0.000 claims abstract description 12
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 11
- 238000005245 sintering Methods 0.000 claims abstract description 11
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 11
- 230000001590 oxidative effect Effects 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 239000000203 mixture Substances 0.000 abstract description 5
- 238000002156 mixing Methods 0.000 abstract description 4
- 239000000463 material Substances 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 12
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 12
- 238000010304 firing Methods 0.000 description 9
- 150000002739 metals Chemical class 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 6
- 239000002245 particle Substances 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000001272 pressureless sintering Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Powder Metallurgy (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62021495A JPS63190133A (ja) | 1987-01-31 | 1987-01-31 | 窒化アルミニウム焼結体およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62021495A JPS63190133A (ja) | 1987-01-31 | 1987-01-31 | 窒化アルミニウム焼結体およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63190133A true JPS63190133A (ja) | 1988-08-05 |
| JPH0564697B2 JPH0564697B2 (enExample) | 1993-09-16 |
Family
ID=12056549
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62021495A Granted JPS63190133A (ja) | 1987-01-31 | 1987-01-31 | 窒化アルミニウム焼結体およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63190133A (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5264388A (en) * | 1988-05-16 | 1993-11-23 | Sumitomo Electric Industries, Inc. | Sintered body of aluminum nitride |
| EP0757023A3 (en) * | 1995-08-03 | 1997-08-13 | Ngk Insulators Ltd | Sintered aluminum nitride bodies and their use for the production of semiconductors |
| JPWO2014057564A1 (ja) * | 2012-10-11 | 2016-08-25 | 岩谷産業株式会社 | 凍結乾燥法を用いた塗布物の製造方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61295275A (ja) * | 1985-06-24 | 1986-12-26 | 日本特殊陶業株式会社 | 高熱伝導性窒化アルミニウム焼結体 |
-
1987
- 1987-01-31 JP JP62021495A patent/JPS63190133A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61295275A (ja) * | 1985-06-24 | 1986-12-26 | 日本特殊陶業株式会社 | 高熱伝導性窒化アルミニウム焼結体 |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5264388A (en) * | 1988-05-16 | 1993-11-23 | Sumitomo Electric Industries, Inc. | Sintered body of aluminum nitride |
| EP0757023A3 (en) * | 1995-08-03 | 1997-08-13 | Ngk Insulators Ltd | Sintered aluminum nitride bodies and their use for the production of semiconductors |
| US5728635A (en) * | 1995-08-03 | 1998-03-17 | Ngk Insulators, Ltd. | Aluminum nitride sintered bodies |
| US5908799A (en) * | 1995-08-03 | 1999-06-01 | Ngk Insulators, Ltd. | Apparatus for producing semiconductor using aluminum nitride bodies as substrates |
| EP0992470A3 (en) * | 1995-08-03 | 2002-07-17 | Ngk Insulators, Ltd. | Aluminium nitride sintered bodies and their use as substrate in an apparatus for producing semiconductors |
| JPWO2014057564A1 (ja) * | 2012-10-11 | 2016-08-25 | 岩谷産業株式会社 | 凍結乾燥法を用いた塗布物の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0564697B2 (enExample) | 1993-09-16 |
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