JPS63185227U - - Google Patents
Info
- Publication number
- JPS63185227U JPS63185227U JP7550287U JP7550287U JPS63185227U JP S63185227 U JPS63185227 U JP S63185227U JP 7550287 U JP7550287 U JP 7550287U JP 7550287 U JP7550287 U JP 7550287U JP S63185227 U JPS63185227 U JP S63185227U
- Authority
- JP
- Japan
- Prior art keywords
- container
- jig
- semiconductor substrate
- pure water
- support
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 2
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 238000009835 boiling Methods 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 239000000243 solution Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
Landscapes
- Formation Of Insulating Films (AREA)
Description
図面は、この考案の半導体基板の表面酸化装置
の１実施例を示し、第１図ａ，ｂはそれぞれ異な
る状態の切断正面図、第２図ないし第４図はそれ
ぞれ一部の正面図、平面図、斜視図、第５図およ
び第６図はそれぞれ時間と純水の流量および温度
との関係図である。
１……容器、２……エツチング液、３……半導
体基板、４……ヒータ、５……注入治具、６……
注入口、７……純水、９……支持体。
The drawings show one embodiment of the device for oxidizing the surface of a semiconductor substrate according to the present invention, and FIGS. 1a and 1b are cutaway front views in different states, and FIGS. 2 to 4 are partial front views and plan views, respectively. The figure, perspective view, FIG. 5, and FIG. 6 are diagrams showing the relationship between time, pure water flow rate, and temperature, respectively. 1... Container, 2... Etching liquid, 3... Semiconductor substrate, 4... Heater, 5... Injection jig, 6...
Inlet, 7...pure water, 9...support.
Claims (1)
設された容器と、前記容器内に配設され上部の注
入口からの純水を前記容器内に注入する注入治具
と、前記治具の上端部に形成され前記容器の上縁
に載置されて前記治具を支持した支持体と、前記
容器内の純水を煮沸する加熱手段とを備えた半導
体基板の表面酸化装置。 a container containing an etching solution and a semiconductor substrate disposed at the bottom; an injection jig disposed within the container for injecting pure water from an injection port at the top into the container; and an upper end portion of the jig. An apparatus for oxidizing a surface of a semiconductor substrate, comprising: a support formed on the upper edge of the container to support the jig; and a heating means for boiling pure water in the container.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7550287U JPS63185227U (en) | 1987-05-20 | 1987-05-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7550287U JPS63185227U (en) | 1987-05-20 | 1987-05-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63185227U true JPS63185227U (en) | 1988-11-29 |
Family
ID=30921703
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7550287U Pending JPS63185227U (en) | 1987-05-20 | 1987-05-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63185227U (en) |
-
1987
- 1987-05-20 JP JP7550287U patent/JPS63185227U/ja active Pending