JPS63183885A - 半導体基板へのマ−キング方法 - Google Patents
半導体基板へのマ−キング方法Info
- Publication number
- JPS63183885A JPS63183885A JP62016512A JP1651287A JPS63183885A JP S63183885 A JPS63183885 A JP S63183885A JP 62016512 A JP62016512 A JP 62016512A JP 1651287 A JP1651287 A JP 1651287A JP S63183885 A JPS63183885 A JP S63183885A
- Authority
- JP
- Japan
- Prior art keywords
- marking
- semiconductor substrate
- photoresist
- protective film
- dusts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 23
- 239000004065 semiconductor Substances 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 title claims abstract description 13
- 230000001681 protective effect Effects 0.000 claims abstract description 13
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 9
- 239000000463 material Substances 0.000 abstract description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 2
- 239000004642 Polyimide Substances 0.000 abstract description 2
- 238000010330 laser marking Methods 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract description 2
- 150000004767 nitrides Chemical class 0.000 abstract description 2
- 239000011368 organic material Substances 0.000 abstract description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 2
- 229920001721 polyimide Polymers 0.000 abstract description 2
- 229920005591 polysilicon Polymers 0.000 abstract description 2
- 239000011241 protective layer Substances 0.000 abstract 1
- 239000000428 dust Substances 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M5/00—Duplicating or marking methods; Sheet materials for use therein
- B41M5/24—Ablative recording, e.g. by burning marks; Spark recording
Landscapes
- Thermal Transfer Or Thermal Recording In General (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Duplication Or Marking (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62016512A JPS63183885A (ja) | 1987-01-26 | 1987-01-26 | 半導体基板へのマ−キング方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62016512A JPS63183885A (ja) | 1987-01-26 | 1987-01-26 | 半導体基板へのマ−キング方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63183885A true JPS63183885A (ja) | 1988-07-29 |
| JPH0533915B2 JPH0533915B2 (cs) | 1993-05-20 |
Family
ID=11918324
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62016512A Granted JPS63183885A (ja) | 1987-01-26 | 1987-01-26 | 半導体基板へのマ−キング方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63183885A (cs) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5151389A (en) * | 1990-09-10 | 1992-09-29 | Rockwell International Corporation | Method for dicing semiconductor substrates using an excimer laser beam |
| US6156676A (en) * | 1997-07-31 | 2000-12-05 | Lsi Logic Corporation | Laser marking of semiconductor wafer substrate while inhibiting adherence to substrate surface of particles generated during laser marking |
| US6413839B1 (en) | 1998-10-23 | 2002-07-02 | Emcore Corporation | Semiconductor device separation using a patterned laser projection |
| JP2006186173A (ja) * | 2004-12-28 | 2006-07-13 | Shin Etsu Handotai Co Ltd | レーザーマーク付き半導体ウェーハの製造方法、及びその半導体ウェーハ |
| JP2008084918A (ja) * | 2006-09-26 | 2008-04-10 | Casio Comput Co Ltd | 半導体装置のマーク形成方法 |
| US7388172B2 (en) | 2003-02-19 | 2008-06-17 | J.P. Sercel Associates, Inc. | System and method for cutting using a variable astigmatic focal beam spot |
| CN116871711A (zh) * | 2023-07-26 | 2023-10-13 | 武汉华工激光工程有限责任公司 | 砷化镓晶圆的激光打标方法及系统 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6195990A (ja) * | 1984-10-18 | 1986-05-14 | Fujitsu Ltd | マ−キング方法 |
-
1987
- 1987-01-26 JP JP62016512A patent/JPS63183885A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6195990A (ja) * | 1984-10-18 | 1986-05-14 | Fujitsu Ltd | マ−キング方法 |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5151389A (en) * | 1990-09-10 | 1992-09-29 | Rockwell International Corporation | Method for dicing semiconductor substrates using an excimer laser beam |
| US6156676A (en) * | 1997-07-31 | 2000-12-05 | Lsi Logic Corporation | Laser marking of semiconductor wafer substrate while inhibiting adherence to substrate surface of particles generated during laser marking |
| US6413839B1 (en) | 1998-10-23 | 2002-07-02 | Emcore Corporation | Semiconductor device separation using a patterned laser projection |
| US6849524B2 (en) | 1998-10-23 | 2005-02-01 | Emcore Corporation | Semiconductor wafer protection and cleaning for device separation using laser ablation |
| US6902990B2 (en) | 1998-10-23 | 2005-06-07 | Emcore Corporation | Semiconductor device separation using a patterned laser projection |
| US7388172B2 (en) | 2003-02-19 | 2008-06-17 | J.P. Sercel Associates, Inc. | System and method for cutting using a variable astigmatic focal beam spot |
| US7709768B2 (en) | 2003-02-19 | 2010-05-04 | Jp Sercel Associates Inc. | System and method for cutting using a variable astigmatic focal beam spot |
| US8502112B2 (en) | 2003-02-19 | 2013-08-06 | Ipg Microsystems Llc | System and method for cutting using a variable astigmatic focal beam spot |
| JP2006186173A (ja) * | 2004-12-28 | 2006-07-13 | Shin Etsu Handotai Co Ltd | レーザーマーク付き半導体ウェーハの製造方法、及びその半導体ウェーハ |
| JP2008084918A (ja) * | 2006-09-26 | 2008-04-10 | Casio Comput Co Ltd | 半導体装置のマーク形成方法 |
| CN116871711A (zh) * | 2023-07-26 | 2023-10-13 | 武汉华工激光工程有限责任公司 | 砷化镓晶圆的激光打标方法及系统 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0533915B2 (cs) | 1993-05-20 |
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