JPH0550851B2 - - Google Patents

Info

Publication number
JPH0550851B2
JPH0550851B2 JP59259751A JP25975184A JPH0550851B2 JP H0550851 B2 JPH0550851 B2 JP H0550851B2 JP 59259751 A JP59259751 A JP 59259751A JP 25975184 A JP25975184 A JP 25975184A JP H0550851 B2 JPH0550851 B2 JP H0550851B2
Authority
JP
Japan
Prior art keywords
glass
coating layer
glass coating
electrode metal
photomask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP59259751A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61137318A (ja
Inventor
Tadao Takano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nihon Inter Electronics Corp
Original Assignee
Nihon Inter Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nihon Inter Electronics Corp filed Critical Nihon Inter Electronics Corp
Priority to JP59259751A priority Critical patent/JPS61137318A/ja
Publication of JPS61137318A publication Critical patent/JPS61137318A/ja
Publication of JPH0550851B2 publication Critical patent/JPH0550851B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP59259751A 1984-12-08 1984-12-08 半導体装置の製造方法 Granted JPS61137318A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59259751A JPS61137318A (ja) 1984-12-08 1984-12-08 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59259751A JPS61137318A (ja) 1984-12-08 1984-12-08 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS61137318A JPS61137318A (ja) 1986-06-25
JPH0550851B2 true JPH0550851B2 (cs) 1993-07-30

Family

ID=17338443

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59259751A Granted JPS61137318A (ja) 1984-12-08 1984-12-08 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS61137318A (cs)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54121732A (en) * 1978-03-15 1979-09-21 Nippon Telegr & Teleph Corp <Ntt> Pattern transfer method

Also Published As

Publication number Publication date
JPS61137318A (ja) 1986-06-25

Similar Documents

Publication Publication Date Title
JPH0550851B2 (cs)
JPH03234043A (ja) 半導体装置の製造方法
JPS63183885A (ja) 半導体基板へのマ−キング方法
JPH05283412A (ja) 半導体装置，およびその製造方法
JPS5932895B2 (ja) 半導体装置およびその製造方法
JPS60176231A (ja) 化合物半導体素子の電極の形成方法
JP2666393B2 (ja) 半導体装置
JP3313259B2 (ja) 薄膜太陽電池の製造方法
JPH0130295B2 (cs)
JPS59104523A (ja) 赤外線検知素子の製造方法
JPS644662B2 (cs)
JP3222344B2 (ja) 発光ダイオードアレイの製造方法
JPH02137227A (ja) 半導体装置の製造方法
JPS6226812A (ja) 半導体装置の製造方法
JP3079608B2 (ja) 半導体装置の製造方法
JPS61129848A (ja) 半導体装置の製造方法
JPH0349212A (ja) 半導体装置の露光パターン用位置合わせマークの形成方法
JPH04264733A (ja) 集積回路装置のバンプ電極用下地膜の形成方法
JPS6257237A (ja) 半導体装置の突出電極形成方法
JPH0272639A (ja) ダイボンディング用半田層の形成方法
JPH0258212A (ja) 半導体装置の製造方法
JPS61116869A (ja) イメ−ジセンサの製造方法
JPH028465B2 (cs)
JPH05206099A (ja) シリコンウェハのエッチング方法
JPS6255941A (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees