JPS6317221B2 - - Google Patents

Info

Publication number
JPS6317221B2
JPS6317221B2 JP55106128A JP10612880A JPS6317221B2 JP S6317221 B2 JPS6317221 B2 JP S6317221B2 JP 55106128 A JP55106128 A JP 55106128A JP 10612880 A JP10612880 A JP 10612880A JP S6317221 B2 JPS6317221 B2 JP S6317221B2
Authority
JP
Japan
Prior art keywords
electrode
electrode group
substrate
container
plasma cvd
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55106128A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5731130A (en
Inventor
Seiichi Nagata
Koshiro Mori
Shinichiro Ishihara
Masatoshi Kitagawa
Takashi Hirao
Masaharu Oono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP10612880A priority Critical patent/JPS5731130A/ja
Publication of JPS5731130A publication Critical patent/JPS5731130A/ja
Publication of JPS6317221B2 publication Critical patent/JPS6317221B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/3411—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
    • H10P14/24—

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
JP10612880A 1980-07-31 1980-07-31 Method and device for plasma chemical vapour deposition Granted JPS5731130A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10612880A JPS5731130A (en) 1980-07-31 1980-07-31 Method and device for plasma chemical vapour deposition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10612880A JPS5731130A (en) 1980-07-31 1980-07-31 Method and device for plasma chemical vapour deposition

Publications (2)

Publication Number Publication Date
JPS5731130A JPS5731130A (en) 1982-02-19
JPS6317221B2 true JPS6317221B2 (show.php) 1988-04-13

Family

ID=14425772

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10612880A Granted JPS5731130A (en) 1980-07-31 1980-07-31 Method and device for plasma chemical vapour deposition

Country Status (1)

Country Link
JP (1) JPS5731130A (show.php)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100337740C (zh) * 2004-06-15 2007-09-19 刘文泉 结晶型二氧化钛光触媒及其合成方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5916328A (ja) * 1982-07-19 1984-01-27 Semiconductor Energy Lab Co Ltd プラズマ気相反応装置
JPH0422349Y2 (show.php) * 1985-11-20 1992-05-21
JPH01157520A (ja) * 1988-11-18 1989-06-20 Semiconductor Energy Lab Co Ltd プラズマ気相反応方法
DE102020112641A1 (de) 2020-05-11 2021-11-11 Hanwha Q Cells Gmbh Haltevorrichtung und Verwendung der Haltevorrichtung

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100337740C (zh) * 2004-06-15 2007-09-19 刘文泉 结晶型二氧化钛光触媒及其合成方法

Also Published As

Publication number Publication date
JPS5731130A (en) 1982-02-19

Similar Documents

Publication Publication Date Title
US7648892B2 (en) Methods and apparatus for depositing a microcrystalline silicon film for photovoltaic device
US5093704A (en) Semiconductor device having a semiconductor region in which a band gap being continuously graded
US5453135A (en) Photoelectric conversion device with improved back reflection layer
JPS60154521A (ja) 炭化珪素被膜作製方法
KR20080033955A (ko) 반도체 구조물, 광기전력 디바이스 및 제조 방법과 솔러모듈
JP2002057359A (ja) 積層型太陽電池
JPH04267568A (ja) 光起電力素子
KR890003148B1 (ko) 반도체 광전 변환장치 및 그 제조방법
JP4767365B2 (ja) 薄膜太陽電池及びその製造方法
JPH11251612A (ja) 光起電力素子の製造方法
JPH04266066A (ja) 光起電力素子
JPS6317221B2 (show.php)
Ahmad et al. Amorphous carbon deposited by a novel aerosol-assisted chemical vapor deposition for photovoltaic solar cells
US6103138A (en) Silicon-system thin film, photovoltaic device, method for forming silicon-system thin film, and method for producing photovoltaic device
US8450140B2 (en) Method for large-scale manufacturing of photovoltaic cells for a converter panel and photovoltaic converter panel
JPH10313125A (ja) 薄膜形成方法
JPH0477281B2 (show.php)
JPH10214986A (ja) 光起電力装置およびその製造方法
JPH04116870A (ja) 受光素子の製造方法
JPS58143589A (ja) シリコン系半導体
JPH07183550A (ja) 非晶質光電変換素子
JP2737111B2 (ja) 光起電力素子及びその製造方法
KR20220153262A (ko) 화학기상증착법을 이용한 태양전지용 cigs 광흡수층의 제조방법
JPS60223114A (ja) 半導体膜の製造装置
JP2004087811A (ja) シリコン太陽電池の製造方法