JPS63160328A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS63160328A JPS63160328A JP61309838A JP30983886A JPS63160328A JP S63160328 A JPS63160328 A JP S63160328A JP 61309838 A JP61309838 A JP 61309838A JP 30983886 A JP30983886 A JP 30983886A JP S63160328 A JPS63160328 A JP S63160328A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- titanium
- titanium nitride
- nitride layer
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 59
- 239000010936 titanium Substances 0.000 claims abstract description 59
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 58
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims abstract description 45
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 25
- 239000010703 silicon Substances 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 18
- 238000005121 nitriding Methods 0.000 claims description 8
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 238000005468 ion implantation Methods 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 230000004888 barrier function Effects 0.000 abstract description 10
- 229910052751 metal Inorganic materials 0.000 abstract description 8
- 239000002184 metal Substances 0.000 abstract description 8
- 229910021341 titanium silicide Inorganic materials 0.000 abstract description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 4
- 229910052757 nitrogen Inorganic materials 0.000 abstract 2
- 238000000151 deposition Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 229910021332 silicide Inorganic materials 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76855—After-treatment introducing at least one additional element into the layer
- H01L21/76856—After-treatment introducing at least one additional element into the layer by treatment in plasmas or gaseous environments, e.g. nitriding a refractory metal liner
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76855—After-treatment introducing at least one additional element into the layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
- H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Plasma & Fusion (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61309838A JPS63160328A (ja) | 1986-12-24 | 1986-12-24 | 半導体装置の製造方法 |
| KR1019870009827A KR910002452B1 (ko) | 1986-12-24 | 1987-09-05 | 반도체장치의 제조방법 |
| DE19873743591 DE3743591A1 (de) | 1986-12-24 | 1987-12-22 | Verfahren zum herstellen einer halbleiteranordnung |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61309838A JPS63160328A (ja) | 1986-12-24 | 1986-12-24 | 半導体装置の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63160328A true JPS63160328A (ja) | 1988-07-04 |
Family
ID=17997879
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61309838A Pending JPS63160328A (ja) | 1986-12-24 | 1986-12-24 | 半導体装置の製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS63160328A (ko) |
| KR (1) | KR910002452B1 (ko) |
| DE (1) | DE3743591A1 (ko) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0266940A (ja) * | 1988-07-11 | 1990-03-07 | Samsung Electron Co Ltd | 半導体装置の金属配線膜の塗布方法 |
| JPH03280424A (ja) * | 1990-03-28 | 1991-12-11 | Sony Corp | 半導体装置の製造方法 |
| JPH04226062A (ja) * | 1990-04-06 | 1992-08-14 | Philips Gloeilampenfab:Nv | 半導体装置 |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3930655A1 (de) * | 1988-09-13 | 1990-03-22 | Mitsubishi Electric Corp | Halbleitervorrichtung mit vielschichtig gestapelter verbindungsschicht und verfahren zu deren herstellung |
| NL8900010A (nl) * | 1989-01-04 | 1990-08-01 | Philips Nv | Halfgeleiderinrichting en werkwijze voor het vervaardigen van een halfgeleiderinrichting. |
| US5236868A (en) * | 1990-04-20 | 1993-08-17 | Applied Materials, Inc. | Formation of titanium nitride on semiconductor wafer by reaction of titanium with nitrogen-bearing gas in an integrated processing system |
| US5250467A (en) * | 1991-03-29 | 1993-10-05 | Applied Materials, Inc. | Method for forming low resistance and low defect density tungsten contacts to silicon semiconductor wafer |
| JP3280803B2 (ja) * | 1994-08-18 | 2002-05-13 | 沖電気工業株式会社 | 半導体装置及びその製造方法 |
| US5877087A (en) | 1995-11-21 | 1999-03-02 | Applied Materials, Inc. | Low temperature integrated metallization process and apparatus |
| US6066358A (en) * | 1995-11-21 | 2000-05-23 | Applied Materials, Inc. | Blanket-selective chemical vapor deposition using an ultra-thin nucleation layer |
| JPH1064902A (ja) * | 1996-07-12 | 1998-03-06 | Applied Materials Inc | アルミニウム材料の成膜方法及び成膜装置 |
| US6001420A (en) * | 1996-09-23 | 1999-12-14 | Applied Materials, Inc. | Semi-selective chemical vapor deposition |
| US6537905B1 (en) | 1996-12-30 | 2003-03-25 | Applied Materials, Inc. | Fully planarized dual damascene metallization using copper line interconnect and selective CVD aluminum plug |
| US6110828A (en) * | 1996-12-30 | 2000-08-29 | Applied Materials, Inc. | In-situ capped aluminum plug (CAP) process using selective CVD AL for integrated plug/interconnect metallization |
| US6139905A (en) * | 1997-04-11 | 2000-10-31 | Applied Materials, Inc. | Integrated CVD/PVD Al planarization using ultra-thin nucleation layers |
| US6605531B1 (en) | 1997-11-26 | 2003-08-12 | Applied Materials, Inc. | Hole-filling technique using CVD aluminum and PVD aluminum integration |
| KR100510465B1 (ko) * | 1998-05-12 | 2005-10-24 | 삼성전자주식회사 | 반도체장치의 배리어 금속막 형성방법 |
| US6797620B2 (en) | 2002-04-16 | 2004-09-28 | Applied Materials, Inc. | Method and apparatus for improved electroplating fill of an aperture |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3140669A1 (de) * | 1981-10-13 | 1983-04-28 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von halbleitervorrichtungen |
-
1986
- 1986-12-24 JP JP61309838A patent/JPS63160328A/ja active Pending
-
1987
- 1987-09-05 KR KR1019870009827A patent/KR910002452B1/ko not_active IP Right Cessation
- 1987-12-22 DE DE19873743591 patent/DE3743591A1/de active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0266940A (ja) * | 1988-07-11 | 1990-03-07 | Samsung Electron Co Ltd | 半導体装置の金属配線膜の塗布方法 |
| JPH03280424A (ja) * | 1990-03-28 | 1991-12-11 | Sony Corp | 半導体装置の製造方法 |
| JPH04226062A (ja) * | 1990-04-06 | 1992-08-14 | Philips Gloeilampenfab:Nv | 半導体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR910002452B1 (ko) | 1991-04-22 |
| DE3743591A1 (de) | 1988-07-07 |
| KR880008418A (ko) | 1988-08-31 |
| DE3743591C2 (ko) | 1992-12-17 |
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