JPS63158840A - 半導体基板の薄膜分解方法及び装置 - Google Patents
半導体基板の薄膜分解方法及び装置Info
- Publication number
- JPS63158840A JPS63158840A JP30536086A JP30536086A JPS63158840A JP S63158840 A JPS63158840 A JP S63158840A JP 30536086 A JP30536086 A JP 30536086A JP 30536086 A JP30536086 A JP 30536086A JP S63158840 A JPS63158840 A JP S63158840A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- wafer
- hydrofluoric acid
- semiconductor substrate
- decomposed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Sampling And Sample Adjustment (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Weting (AREA)
- Investigating Or Analyzing Non-Biological Materials By The Use Of Chemical Means (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30536086A JPS63158840A (ja) | 1986-12-23 | 1986-12-23 | 半導体基板の薄膜分解方法及び装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30536086A JPS63158840A (ja) | 1986-12-23 | 1986-12-23 | 半導体基板の薄膜分解方法及び装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63158840A true JPS63158840A (ja) | 1988-07-01 |
| JPH0543289B2 JPH0543289B2 (cs) | 1993-07-01 |
Family
ID=17944177
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30536086A Granted JPS63158840A (ja) | 1986-12-23 | 1986-12-23 | 半導体基板の薄膜分解方法及び装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63158840A (cs) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1991012631A1 (fr) * | 1990-02-19 | 1991-08-22 | Purex Co., Ltd. | Recipient pour echantillons de tranches semiconductrices et procede de preparation de tranches |
| WO2015182670A1 (ja) * | 2014-05-30 | 2015-12-03 | 株式会社住化分析センター | 分析用サンプルの回収方法およびその利用 |
-
1986
- 1986-12-23 JP JP30536086A patent/JPS63158840A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1991012631A1 (fr) * | 1990-02-19 | 1991-08-22 | Purex Co., Ltd. | Recipient pour echantillons de tranches semiconductrices et procede de preparation de tranches |
| WO2015182670A1 (ja) * | 2014-05-30 | 2015-12-03 | 株式会社住化分析センター | 分析用サンプルの回収方法およびその利用 |
| JPWO2015182670A1 (ja) * | 2014-05-30 | 2017-04-20 | 株式会社住化分析センター | 分析用サンプルの回収方法およびその利用 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0543289B2 (cs) | 1993-07-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2944099B2 (ja) | 不純物の測定方法及び不純物の回収装置 | |
| US4584886A (en) | Resolution device for semiconductor thin films | |
| JPS63158840A (ja) | 半導体基板の薄膜分解方法及び装置 | |
| Imad-Uddin Ahmed et al. | Desorption and reaction of water on MgO (100) studied as a function of surface preparation | |
| Stern et al. | The condensation coefficient of iodine | |
| GB1483574A (en) | Two-part composite device for histologic tissue processing and embedding | |
| JPS6421973A (en) | Device for manufacturing superconductive material | |
| JPS61144545A (ja) | 薄膜薄板溶解装置 | |
| Lamprecht et al. | Solubility of metals in liquid sodium. II. The system sodium-lead | |
| Mousa et al. | NMR investigations of cation diffusion in some solids with antifluorite structure | |
| Bernstein et al. | All solid state ion-conducting cesium source for atomic clocks | |
| JPS622546A (ja) | 半導体薄膜の分解装置 | |
| JPH0666260B2 (ja) | 清浄度評価方法 | |
| JPH0198944A (ja) | シリコン半導体基板の表面分析方法 | |
| Adams et al. | Exchange kinetics of chlorine with sodium chloride; a mechanistic interpretation involving trapped holes | |
| JPS61221649A (ja) | 半導体薄膜の分解装置 | |
| JPS6338135A (ja) | 基板上薄膜の分解装置 | |
| JP2772035B2 (ja) | ウエハ表面の不純物量の測定方法 | |
| JP2585277B2 (ja) | 表面処理装置 | |
| JPS6247551A (ja) | 半導体基板の薄膜分解方法及び装置 | |
| JPH04110647A (ja) | 半導体薄膜中の超微量元素分析方法 | |
| JPH01189559A (ja) | Si半導体基板の表面分析方法 | |
| JPH03188642A (ja) | 半導体薄膜の超微量元素分析におけるエッチング方法 | |
| Matthews Jr et al. | Thermally stimulated depolarization spectra of Ca F 2 containing Gd and hydrogen | |
| JPH0192656A (ja) | Si半導体基板の表面分析方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |