JPS6315750B2 - - Google Patents

Info

Publication number
JPS6315750B2
JPS6315750B2 JP54146579A JP14657979A JPS6315750B2 JP S6315750 B2 JPS6315750 B2 JP S6315750B2 JP 54146579 A JP54146579 A JP 54146579A JP 14657979 A JP14657979 A JP 14657979A JP S6315750 B2 JPS6315750 B2 JP S6315750B2
Authority
JP
Japan
Prior art keywords
photoelectric conversion
layer
conversion device
film
metal electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54146579A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5670673A (en
Inventor
Yukio Takasaki
Tadaaki Hirai
Hideaki Yamamoto
Toshihisa Tsukada
Yoshiaki Mori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14657979A priority Critical patent/JPS5670673A/ja
Priority to DE8080304022T priority patent/DE3070336D1/de
Priority to EP80304022A priority patent/EP0029679B1/en
Priority to CA000364687A priority patent/CA1162279A/en
Priority to US06/206,780 priority patent/US4429325A/en
Publication of JPS5670673A publication Critical patent/JPS5670673A/ja
Publication of JPS6315750B2 publication Critical patent/JPS6315750B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding

Landscapes

  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP14657979A 1979-11-14 1979-11-14 Photoelectric converter Granted JPS5670673A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP14657979A JPS5670673A (en) 1979-11-14 1979-11-14 Photoelectric converter
DE8080304022T DE3070336D1 (en) 1979-11-14 1980-11-11 Photoelectric device
EP80304022A EP0029679B1 (en) 1979-11-14 1980-11-11 Photoelectric device
CA000364687A CA1162279A (en) 1979-11-14 1980-11-14 Photosensor
US06/206,780 US4429325A (en) 1979-11-14 1980-11-14 Photosensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14657979A JPS5670673A (en) 1979-11-14 1979-11-14 Photoelectric converter

Publications (2)

Publication Number Publication Date
JPS5670673A JPS5670673A (en) 1981-06-12
JPS6315750B2 true JPS6315750B2 (oth) 1988-04-06

Family

ID=15410880

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14657979A Granted JPS5670673A (en) 1979-11-14 1979-11-14 Photoelectric converter

Country Status (5)

Country Link
US (1) US4429325A (oth)
EP (1) EP0029679B1 (oth)
JP (1) JPS5670673A (oth)
CA (1) CA1162279A (oth)
DE (1) DE3070336D1 (oth)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56157075A (en) * 1980-05-09 1981-12-04 Hitachi Ltd Photoelectric transducing device
DE3124810A1 (de) * 1981-06-24 1983-01-13 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen amorpher selenschichten mit und ohne dotierende zusaetze, sowie eine durch das verfahren hergestellte oberflaechenschicht einer fotoleitertrommel
JPS5821875A (ja) * 1981-07-31 1983-02-08 Seiko Epson Corp イメ−ジセンサ
JPS5848578A (ja) * 1981-09-17 1983-03-22 Matsushita Electric Ind Co Ltd 固体撮像装置
JPS5890769A (ja) * 1981-11-25 1983-05-30 Mitsubishi Electric Corp 積層半導体装置
JPS5945781A (ja) * 1982-09-09 1984-03-14 Fuji Photo Film Co Ltd 半導体撮像装置
JPS59108457A (ja) * 1982-12-14 1984-06-22 Olympus Optical Co Ltd 固体撮像素子
DD227311A1 (de) * 1984-09-17 1985-09-11 Adw Ddr Optoelektronischer festkoerperschalter
US5101255A (en) * 1987-01-14 1992-03-31 Sachio Ishioka Amorphous photoelectric conversion device with avalanche
JP2001284628A (ja) * 2000-03-29 2001-10-12 Shindengen Electric Mfg Co Ltd Ｘ線検出装置
JP2005012049A (ja) * 2003-06-20 2005-01-13 Shimadzu Corp 放射線検出器およびそれを備えた放射線撮像装置
JP2005019543A (ja) * 2003-06-24 2005-01-20 Shimadzu Corp 二次元半導体検出器および二次元撮像装置
US7615731B2 (en) * 2006-09-14 2009-11-10 Carestream Health, Inc. High fill-factor sensor with reduced coupling

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5419127B2 (oth) 1974-06-21 1979-07-12
FR2366698A1 (fr) * 1976-09-29 1978-04-28 Hitachi Ltd Films photoconducteurs, en particulier pour cibles de tubes analyseurs d'images
US4236829A (en) 1978-01-31 1980-12-02 Matsushita Electric Industrial Co., Ltd. Solid-state image sensor
JPS5846066B2 (ja) * 1978-01-31 1983-10-14 松下電器産業株式会社 光電変換装置
FR2433871A1 (fr) 1978-08-18 1980-03-14 Hitachi Ltd Dispositif de formation d'image a semi-conducteur
US4233514A (en) * 1978-12-14 1980-11-11 General Electric Company Solid state radiation detector and arrays thereof
JPS56103578A (en) * 1980-01-23 1981-08-18 Hitachi Ltd Solid state pickup element

Also Published As

Publication number Publication date
DE3070336D1 (en) 1985-04-25
JPS5670673A (en) 1981-06-12
EP0029679A3 (en) 1982-04-28
CA1162279A (en) 1984-02-14
EP0029679A2 (en) 1981-06-03
US4429325A (en) 1984-01-31
EP0029679B1 (en) 1985-03-20

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