CA1162279A - Photosensor - Google Patents
PhotosensorInfo
- Publication number
- CA1162279A CA1162279A CA000364687A CA364687A CA1162279A CA 1162279 A CA1162279 A CA 1162279A CA 000364687 A CA000364687 A CA 000364687A CA 364687 A CA364687 A CA 364687A CA 1162279 A CA1162279 A CA 1162279A
- Authority
- CA
- Canada
- Prior art keywords
- layer
- photoelectric conversion
- metal electrode
- photosensor
- recombination
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005215 recombination Methods 0.000 claims abstract description 47
- 230000006798 recombination Effects 0.000 claims abstract description 47
- 238000006243 chemical reaction Methods 0.000 claims abstract description 42
- 229910052751 metal Inorganic materials 0.000 claims abstract description 40
- 239000002184 metal Substances 0.000 claims abstract description 40
- 239000000463 material Substances 0.000 claims abstract description 20
- 229910052959 stibnite Inorganic materials 0.000 claims abstract description 10
- 229910017000 As2Se3 Inorganic materials 0.000 claims abstract description 9
- 229910052958 orpiment Inorganic materials 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 12
- 229910005543 GaSe Inorganic materials 0.000 claims description 4
- 229910007657 ZnSb Inorganic materials 0.000 claims description 4
- 229910010272 inorganic material Inorganic materials 0.000 claims description 4
- 239000011147 inorganic material Substances 0.000 claims description 4
- 229910017115 AlSb Inorganic materials 0.000 claims description 3
- 230000004044 response Effects 0.000 abstract description 10
- 239000010410 layer Substances 0.000 description 108
- 239000010408 film Substances 0.000 description 45
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 18
- 238000009826 distribution Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 230000000903 blocking effect Effects 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 229910052681 coesite Inorganic materials 0.000 description 9
- 229910052906 cristobalite Inorganic materials 0.000 description 9
- 229910052739 hydrogen Inorganic materials 0.000 description 9
- 239000001257 hydrogen Substances 0.000 description 9
- 239000000377 silicon dioxide Substances 0.000 description 9
- 235000012239 silicon dioxide Nutrition 0.000 description 9
- 229910052682 stishovite Inorganic materials 0.000 description 9
- 229910052905 tridymite Inorganic materials 0.000 description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 229910052732 germanium Inorganic materials 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000010276 construction Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 229910052714 tellurium Inorganic materials 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000002178 crystalline material Substances 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 244000187656 Eucalyptus cornuta Species 0.000 description 1
- 241001591024 Samea Species 0.000 description 1
- 206010047571 Visual impairment Diseases 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000008246 gaseous mixture Substances 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910021480 group 4 element Inorganic materials 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000002390 rotary evaporation Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/191—Photoconductor image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8057—Optical shielding
Landscapes
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14657979A JPS5670673A (en) | 1979-11-14 | 1979-11-14 | Photoelectric converter |
| JP146579/1979 | 1979-11-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1162279A true CA1162279A (en) | 1984-02-14 |
Family
ID=15410880
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000364687A Expired CA1162279A (en) | 1979-11-14 | 1980-11-14 | Photosensor |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4429325A (oth) |
| EP (1) | EP0029679B1 (oth) |
| JP (1) | JPS5670673A (oth) |
| CA (1) | CA1162279A (oth) |
| DE (1) | DE3070336D1 (oth) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56157075A (en) * | 1980-05-09 | 1981-12-04 | Hitachi Ltd | Photoelectric transducing device |
| DE3124810A1 (de) * | 1981-06-24 | 1983-01-13 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen amorpher selenschichten mit und ohne dotierende zusaetze, sowie eine durch das verfahren hergestellte oberflaechenschicht einer fotoleitertrommel |
| JPS5821875A (ja) * | 1981-07-31 | 1983-02-08 | Seiko Epson Corp | イメ−ジセンサ |
| JPS5848578A (ja) * | 1981-09-17 | 1983-03-22 | Matsushita Electric Ind Co Ltd | 固体撮像装置 |
| JPS5890769A (ja) * | 1981-11-25 | 1983-05-30 | Mitsubishi Electric Corp | 積層半導体装置 |
| JPS5945781A (ja) * | 1982-09-09 | 1984-03-14 | Fuji Photo Film Co Ltd | 半導体撮像装置 |
| JPS59108457A (ja) * | 1982-12-14 | 1984-06-22 | Olympus Optical Co Ltd | 固体撮像素子 |
| DD227311A1 (de) * | 1984-09-17 | 1985-09-11 | Adw Ddr | Optoelektronischer festkoerperschalter |
| US5101255A (en) * | 1987-01-14 | 1992-03-31 | Sachio Ishioka | Amorphous photoelectric conversion device with avalanche |
| JP2001284628A (ja) * | 2000-03-29 | 2001-10-12 | Shindengen Electric Mfg Co Ltd | Ｘ線検出装置 |
| JP2005012049A (ja) * | 2003-06-20 | 2005-01-13 | Shimadzu Corp | 放射線検出器およびそれを備えた放射線撮像装置 |
| JP2005019543A (ja) * | 2003-06-24 | 2005-01-20 | Shimadzu Corp | 二次元半導体検出器および二次元撮像装置 |
| US7615731B2 (en) * | 2006-09-14 | 2009-11-10 | Carestream Health, Inc. | High fill-factor sensor with reduced coupling |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5419127B2 (oth) | 1974-06-21 | 1979-07-12 | ||
| FR2366698A1 (fr) * | 1976-09-29 | 1978-04-28 | Hitachi Ltd | Films photoconducteurs, en particulier pour cibles de tubes analyseurs d'images |
| US4236829A (en) | 1978-01-31 | 1980-12-02 | Matsushita Electric Industrial Co., Ltd. | Solid-state image sensor |
| JPS5846066B2 (ja) * | 1978-01-31 | 1983-10-14 | 松下電器産業株式会社 | 光電変換装置 |
| FR2433871A1 (fr) | 1978-08-18 | 1980-03-14 | Hitachi Ltd | Dispositif de formation d'image a semi-conducteur |
| US4233514A (en) * | 1978-12-14 | 1980-11-11 | General Electric Company | Solid state radiation detector and arrays thereof |
| JPS56103578A (en) * | 1980-01-23 | 1981-08-18 | Hitachi Ltd | Solid state pickup element |
-
1979
- 1979-11-14 JP JP14657979A patent/JPS5670673A/ja active Granted
-
1980
- 1980-11-11 DE DE8080304022T patent/DE3070336D1/de not_active Expired
- 1980-11-11 EP EP80304022A patent/EP0029679B1/en not_active Expired
- 1980-11-14 CA CA000364687A patent/CA1162279A/en not_active Expired
- 1980-11-14 US US06/206,780 patent/US4429325A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE3070336D1 (en) | 1985-04-25 |
| JPS5670673A (en) | 1981-06-12 |
| EP0029679A3 (en) | 1982-04-28 |
| EP0029679A2 (en) | 1981-06-03 |
| US4429325A (en) | 1984-01-31 |
| EP0029679B1 (en) | 1985-03-20 |
| JPS6315750B2 (oth) | 1988-04-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |