FR2366698A1 - Films photoconducteurs, en particulier pour cibles de tubes analyseurs d'images - Google Patents

Films photoconducteurs, en particulier pour cibles de tubes analyseurs d'images

Info

Publication number
FR2366698A1
FR2366698A1 FR7629207A FR7629207A FR2366698A1 FR 2366698 A1 FR2366698 A1 FR 2366698A1 FR 7629207 A FR7629207 A FR 7629207A FR 7629207 A FR7629207 A FR 7629207A FR 2366698 A1 FR2366698 A1 FR 2366698A1
Authority
FR
France
Prior art keywords
elements
concn
layer
atom
added
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7629207A
Other languages
English (en)
Other versions
FR2366698B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to FR7629207A priority Critical patent/FR2366698A1/fr
Publication of FR2366698A1 publication Critical patent/FR2366698A1/fr
Application granted granted Critical
Publication of FR2366698B1 publication Critical patent/FR2366698B1/fr
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03GELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02Charge-receiving layers
    • G03G5/04Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/043Photoconductive layers characterised by having two or more layers or characterised by their composite structure
    • G03G5/0433Photoconductive layers characterised by having two or more layers or characterised by their composite structure all layers being inorganic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36Photoelectric screens; Charge-storage screens
    • H01J29/39Charge-storage screens
    • H01J29/45Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • H01J29/451Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
    • H01J29/456Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions exhibiting no discontinuities, e.g. consisting of uniform layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/20Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
    • H01J9/233Manufacture of photoelectric screens or charge-storage screens
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264Inorganic materials
    • H01L31/0272Selenium or tellurium
    • H01L31/02725Selenium or tellurium characterised by the doping material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09Devices sensitive to infrared, visible or ultraviolet radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
  • Light Receiving Elements (AREA)

Abstract

Le film photoconducteur de l'invention comporte une première région 3 comportant Se dans lequel Te et un élément capable de former des niveaux profonds dans Se sont ajoutés à des concentrations inférieures à 10 % en atomes au total, en moyenne, respectivement, une seconde région 4 avec Se dans lequel on ajoute Te avec une répartition continue de la concentration présentant une crête de valeur supérieure à 15 % en atomes au total, une troisième région 5 comportant Se dans lequel on ajoute un élément capable de former des niveaux profonds dans Se, avec une répartition continue de concentration présentant une crête de valeur supérieure à 15 % en atomes au total, et une quatrième région 6, comportant Se auquel on ajoute Te et un élément capable de former des niveaux profonds dans Se, à des concentrations respectives inférieures à 10 % en atomes au total en moyenne
FR7629207A 1976-09-29 1976-09-29 Films photoconducteurs, en particulier pour cibles de tubes analyseurs d'images Granted FR2366698A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7629207A FR2366698A1 (fr) 1976-09-29 1976-09-29 Films photoconducteurs, en particulier pour cibles de tubes analyseurs d'images

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7629207A FR2366698A1 (fr) 1976-09-29 1976-09-29 Films photoconducteurs, en particulier pour cibles de tubes analyseurs d'images

Publications (2)

Publication Number Publication Date
FR2366698A1 true FR2366698A1 (fr) 1978-04-28
FR2366698B1 FR2366698B1 (fr) 1979-01-12

Family

ID=9178194

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7629207A Granted FR2366698A1 (fr) 1976-09-29 1976-09-29 Films photoconducteurs, en particulier pour cibles de tubes analyseurs d'images

Country Status (1)

Country Link
FR (1) FR2366698A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0029679A2 (fr) * 1979-11-14 1981-06-03 Hitachi, Ltd. Dispositif photoélectrique

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
REVUE US "IEEE TRANSACTIONS ON ELECTRON DEVICES" VOLUME ED-21, NO. 11 NOVEMBRE 1974 "SATICON:A NEW PHOTO-CONDUCTIVE CAMERA TUBE WITH SE-AS-TE TARGET" N.GOTO ET AL PAGES 662-666) *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0029679A2 (fr) * 1979-11-14 1981-06-03 Hitachi, Ltd. Dispositif photoélectrique
EP0029679A3 (en) * 1979-11-14 1982-04-28 Hitachi, Ltd. Photoelectric device

Also Published As

Publication number Publication date
FR2366698B1 (fr) 1979-01-12

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