FR2366698A1 - Films photoconducteurs, en particulier pour cibles de tubes analyseurs d'images - Google Patents
Films photoconducteurs, en particulier pour cibles de tubes analyseurs d'imagesInfo
- Publication number
- FR2366698A1 FR2366698A1 FR7629207A FR7629207A FR2366698A1 FR 2366698 A1 FR2366698 A1 FR 2366698A1 FR 7629207 A FR7629207 A FR 7629207A FR 7629207 A FR7629207 A FR 7629207A FR 2366698 A1 FR2366698 A1 FR 2366698A1
- Authority
- FR
- France
- Prior art keywords
- elements
- concn
- layer
- atom
- added
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011669 selenium Substances 0.000 title abstract 9
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 title abstract 4
- 229910052711 selenium Inorganic materials 0.000 title abstract 4
- 229910052785 arsenic Inorganic materials 0.000 title abstract 2
- 229910052714 tellurium Inorganic materials 0.000 title abstract 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 title abstract 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 title 1
- 238000010276 construction Methods 0.000 title 1
- 230000007774 longterm Effects 0.000 title 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 230000000717 retained effect Effects 0.000 abstract 1
- 238000009834 vaporization Methods 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/043—Photoconductive layers characterised by having two or more layers or characterised by their composite structure
- G03G5/0433—Photoconductive layers characterised by having two or more layers or characterised by their composite structure all layers being inorganic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/36—Photoelectric screens; Charge-storage screens
- H01J29/39—Charge-storage screens
- H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
- H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
- H01J29/456—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions exhibiting no discontinuities, e.g. consisting of uniform layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
- H01J9/233—Manufacture of photoelectric screens or charge-storage screens
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0272—Selenium or tellurium
- H01L31/02725—Selenium or tellurium characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
- Light Receiving Elements (AREA)
Abstract
Le film photoconducteur de l'invention comporte une première région 3 comportant Se dans lequel Te et un élément capable de former des niveaux profonds dans Se sont ajoutés à des concentrations inférieures à 10 % en atomes au total, en moyenne, respectivement, une seconde région 4 avec Se dans lequel on ajoute Te avec une répartition continue de la concentration présentant une crête de valeur supérieure à 15 % en atomes au total, une troisième région 5 comportant Se dans lequel on ajoute un élément capable de former des niveaux profonds dans Se, avec une répartition continue de concentration présentant une crête de valeur supérieure à 15 % en atomes au total, et une quatrième région 6, comportant Se auquel on ajoute Te et un élément capable de former des niveaux profonds dans Se, à des concentrations respectives inférieures à 10 % en atomes au total en moyenne
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7629207A FR2366698A1 (fr) | 1976-09-29 | 1976-09-29 | Films photoconducteurs, en particulier pour cibles de tubes analyseurs d'images |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7629207A FR2366698A1 (fr) | 1976-09-29 | 1976-09-29 | Films photoconducteurs, en particulier pour cibles de tubes analyseurs d'images |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2366698A1 true FR2366698A1 (fr) | 1978-04-28 |
FR2366698B1 FR2366698B1 (fr) | 1979-01-12 |
Family
ID=9178194
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7629207A Granted FR2366698A1 (fr) | 1976-09-29 | 1976-09-29 | Films photoconducteurs, en particulier pour cibles de tubes analyseurs d'images |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2366698A1 (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0029679A2 (fr) * | 1979-11-14 | 1981-06-03 | Hitachi, Ltd. | Dispositif photoélectrique |
-
1976
- 1976-09-29 FR FR7629207A patent/FR2366698A1/fr active Granted
Non-Patent Citations (1)
Title |
---|
REVUE US "IEEE TRANSACTIONS ON ELECTRON DEVICES" VOLUME ED-21, NO. 11 NOVEMBRE 1974 "SATICON:A NEW PHOTO-CONDUCTIVE CAMERA TUBE WITH SE-AS-TE TARGET" N.GOTO ET AL PAGES 662-666) * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0029679A2 (fr) * | 1979-11-14 | 1981-06-03 | Hitachi, Ltd. | Dispositif photoélectrique |
EP0029679A3 (en) * | 1979-11-14 | 1982-04-28 | Hitachi, Ltd. | Photoelectric device |
Also Published As
Publication number | Publication date |
---|---|
FR2366698B1 (fr) | 1979-01-12 |
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