JPS63157462A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS63157462A
JPS63157462A JP61304676A JP30467686A JPS63157462A JP S63157462 A JPS63157462 A JP S63157462A JP 61304676 A JP61304676 A JP 61304676A JP 30467686 A JP30467686 A JP 30467686A JP S63157462 A JPS63157462 A JP S63157462A
Authority
JP
Japan
Prior art keywords
region
type
diode
transistor
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61304676A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0583190B2 (cs
Inventor
Junichi Nakao
中尾　淳一
Tomonori Ito
智徳 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP61304676A priority Critical patent/JPS63157462A/ja
Publication of JPS63157462A publication Critical patent/JPS63157462A/ja
Publication of JPH0583190B2 publication Critical patent/JPH0583190B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes

Landscapes

  • Bipolar Integrated Circuits (AREA)
JP61304676A 1986-12-20 1986-12-20 半導体装置 Granted JPS63157462A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61304676A JPS63157462A (ja) 1986-12-20 1986-12-20 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61304676A JPS63157462A (ja) 1986-12-20 1986-12-20 半導体装置

Publications (2)

Publication Number Publication Date
JPS63157462A true JPS63157462A (ja) 1988-06-30
JPH0583190B2 JPH0583190B2 (cs) 1993-11-25

Family

ID=17935883

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61304676A Granted JPS63157462A (ja) 1986-12-20 1986-12-20 半導体装置

Country Status (1)

Country Link
JP (1) JPS63157462A (cs)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02170568A (ja) * 1988-10-28 1990-07-02 Sgs Thomson Microelettronica Spa ダーリントン装置
JP2006108543A (ja) * 2004-10-08 2006-04-20 Matsushita Electric Ind Co Ltd 半導体装置
JP2008171939A (ja) * 2007-01-10 2008-07-24 Sansha Electric Mfg Co Ltd ダイオード内蔵トランジスタ

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02170568A (ja) * 1988-10-28 1990-07-02 Sgs Thomson Microelettronica Spa ダーリントン装置
JP2006108543A (ja) * 2004-10-08 2006-04-20 Matsushita Electric Ind Co Ltd 半導体装置
JP2008171939A (ja) * 2007-01-10 2008-07-24 Sansha Electric Mfg Co Ltd ダイオード内蔵トランジスタ

Also Published As

Publication number Publication date
JPH0583190B2 (cs) 1993-11-25

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