JPS63153852A - 半導体記憶装置 - Google Patents

半導体記憶装置

Info

Publication number
JPS63153852A
JPS63153852A JP61301963A JP30196386A JPS63153852A JP S63153852 A JPS63153852 A JP S63153852A JP 61301963 A JP61301963 A JP 61301963A JP 30196386 A JP30196386 A JP 30196386A JP S63153852 A JPS63153852 A JP S63153852A
Authority
JP
Japan
Prior art keywords
substrate bias
substrate
supply line
power supply
bias power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61301963A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0581064B2 (enrdf_load_html_response
Inventor
Hiroyuki Yamazaki
山崎　宏之
Masaki Kumanotani
正樹 熊野谷
Isato Ikeda
勇人 池田
Kazuhiro Tsukamoto
塚本　和宏
Hideto Hidaka
秀人 日高
Yasuhiro Konishi
康弘 小西
Katsumi Dosaka
勝己 堂阪
Hideji Miyatake
秀司 宮武
Masaki Shimoda
下田　正喜
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP61301963A priority Critical patent/JPS63153852A/ja
Publication of JPS63153852A publication Critical patent/JPS63153852A/ja
Publication of JPH0581064B2 publication Critical patent/JPH0581064B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/213—Design considerations for internal polarisation in field-effect devices
    • H10D89/215—Design considerations for internal polarisation in field-effect devices comprising arrangements for charge pumping or biasing substrates

Landscapes

  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP61301963A 1986-12-17 1986-12-17 半導体記憶装置 Granted JPS63153852A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61301963A JPS63153852A (ja) 1986-12-17 1986-12-17 半導体記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61301963A JPS63153852A (ja) 1986-12-17 1986-12-17 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS63153852A true JPS63153852A (ja) 1988-06-27
JPH0581064B2 JPH0581064B2 (enrdf_load_html_response) 1993-11-11

Family

ID=17903230

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61301963A Granted JPS63153852A (ja) 1986-12-17 1986-12-17 半導体記憶装置

Country Status (1)

Country Link
JP (1) JPS63153852A (enrdf_load_html_response)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02112274A (ja) * 1988-10-21 1990-04-24 Hitachi Ltd 半導体記憶装置
JPH0329357A (ja) * 1989-06-26 1991-02-07 Nec Corp 半導体記憶装置
US9871027B2 (en) 2014-09-02 2018-01-16 Socionext Inc. Semiconductor device having mesh-patterned wirings

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02112274A (ja) * 1988-10-21 1990-04-24 Hitachi Ltd 半導体記憶装置
JPH0329357A (ja) * 1989-06-26 1991-02-07 Nec Corp 半導体記憶装置
US9871027B2 (en) 2014-09-02 2018-01-16 Socionext Inc. Semiconductor device having mesh-patterned wirings

Also Published As

Publication number Publication date
JPH0581064B2 (enrdf_load_html_response) 1993-11-11

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