JPS63145771A - スパツタリングタ−ゲツト - Google Patents

スパツタリングタ−ゲツト

Info

Publication number
JPS63145771A
JPS63145771A JP29374286A JP29374286A JPS63145771A JP S63145771 A JPS63145771 A JP S63145771A JP 29374286 A JP29374286 A JP 29374286A JP 29374286 A JP29374286 A JP 29374286A JP S63145771 A JPS63145771 A JP S63145771A
Authority
JP
Japan
Prior art keywords
sputtering
target
aluminum
crystal orientation
content ratio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP29374286A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0310709B2 (enrdf_load_stackoverflow
Inventor
Tadao Ueda
上田　忠雄
Shiro Matsuoka
松岡　司郎
Kazunari Takemura
一成 竹村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Chemical Corp
Original Assignee
Kasei Naoetsu Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kasei Naoetsu Industries Ltd filed Critical Kasei Naoetsu Industries Ltd
Priority to JP29374286A priority Critical patent/JPS63145771A/ja
Publication of JPS63145771A publication Critical patent/JPS63145771A/ja
Publication of JPH0310709B2 publication Critical patent/JPH0310709B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Physical Vapour Deposition (AREA)
JP29374286A 1986-12-10 1986-12-10 スパツタリングタ−ゲツト Granted JPS63145771A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP29374286A JPS63145771A (ja) 1986-12-10 1986-12-10 スパツタリングタ−ゲツト

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29374286A JPS63145771A (ja) 1986-12-10 1986-12-10 スパツタリングタ−ゲツト

Publications (2)

Publication Number Publication Date
JPS63145771A true JPS63145771A (ja) 1988-06-17
JPH0310709B2 JPH0310709B2 (enrdf_load_stackoverflow) 1991-02-14

Family

ID=17798652

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29374286A Granted JPS63145771A (ja) 1986-12-10 1986-12-10 スパツタリングタ−ゲツト

Country Status (1)

Country Link
JP (1) JPS63145771A (enrdf_load_stackoverflow)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63216966A (ja) * 1987-03-06 1988-09-09 Toshiba Corp スパツタタ−ゲツト
JPH0417670A (ja) * 1990-05-11 1992-01-22 Kobe Steel Ltd 光メディア用スパッタリングターゲット溶製材
JPH0426757A (ja) * 1990-05-22 1992-01-29 Kobe Steel Ltd Ａｌ合金薄膜及び溶製Ａｌ合金スパッタリングターゲット
US5456815A (en) * 1993-04-08 1995-10-10 Japan Energy Corporation Sputtering targets of high-purity aluminum or alloy thereof
US5976641A (en) * 1991-03-07 1999-11-02 Kabushiki Kaisha Kobe Seiko Sho A1 alloy films and melting A1 alloy sputtering targets for depositing A1 alloy films
US6030511A (en) * 1995-02-03 2000-02-29 Nec Corporation Collimated sputtering method and system used therefor
JPWO2005031028A1 (ja) * 2003-09-26 2007-11-15 株式会社東芝 スパッタリングターゲットとそれを用いたＳｉ酸化膜およびその製造方法、ディスプレイ装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6377021B2 (ja) * 2015-06-05 2018-08-22 株式会社コベルコ科研 Ａｌ合金スパッタリングターゲット

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
10TH INTERNATIONAL VACUUM CONGRESS(IVC-10) *
J.APPL.PHYS.=1981 *
J.VAC.SCI.TECHNOL.A=1986 *
RADIATION EFFECTS=1981 *
THIN SOLID FILMS,96(1982) *

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63216966A (ja) * 1987-03-06 1988-09-09 Toshiba Corp スパツタタ−ゲツト
JPH0417670A (ja) * 1990-05-11 1992-01-22 Kobe Steel Ltd 光メディア用スパッタリングターゲット溶製材
JPH0426757A (ja) * 1990-05-22 1992-01-29 Kobe Steel Ltd Ａｌ合金薄膜及び溶製Ａｌ合金スパッタリングターゲット
US5976641A (en) * 1991-03-07 1999-11-02 Kabushiki Kaisha Kobe Seiko Sho A1 alloy films and melting A1 alloy sputtering targets for depositing A1 alloy films
US6206985B1 (en) 1991-03-07 2001-03-27 Kabushiki Kaisha Kobe Seiko Sho A1 alloy films and melting A1 alloy sputtering targets for depositing A1 alloy films
US5456815A (en) * 1993-04-08 1995-10-10 Japan Energy Corporation Sputtering targets of high-purity aluminum or alloy thereof
US6030511A (en) * 1995-02-03 2000-02-29 Nec Corporation Collimated sputtering method and system used therefor
JPWO2005031028A1 (ja) * 2003-09-26 2007-11-15 株式会社東芝 スパッタリングターゲットとそれを用いたＳｉ酸化膜およびその製造方法、ディスプレイ装置
US7998324B2 (en) 2003-09-26 2011-08-16 Kabushiki Kaisha Toshiba Sputtering target and process for producing si oxide film therewith
JP4791825B2 (ja) * 2003-09-26 2011-10-12 株式会社東芝 スパッタリングターゲットとそれを用いたＳｉ酸化膜およびその製造方法、ディスプレイ装置

Also Published As

Publication number Publication date
JPH0310709B2 (enrdf_load_stackoverflow) 1991-02-14

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