JPH0572470B2 - - Google Patents
Info
- Publication number
- JPH0572470B2 JPH0572470B2 JP62150376A JP15037687A JPH0572470B2 JP H0572470 B2 JPH0572470 B2 JP H0572470B2 JP 62150376 A JP62150376 A JP 62150376A JP 15037687 A JP15037687 A JP 15037687A JP H0572470 B2 JPH0572470 B2 JP H0572470B2
- Authority
- JP
- Japan
- Prior art keywords
- aluminum
- sputtering
- target
- center
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15037687A JPS63312975A (ja) | 1987-06-17 | 1987-06-17 | アルミニウムスパツタリングタ−ゲツト |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15037687A JPS63312975A (ja) | 1987-06-17 | 1987-06-17 | アルミニウムスパツタリングタ−ゲツト |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63312975A JPS63312975A (ja) | 1988-12-21 |
JPH0572470B2 true JPH0572470B2 (enrdf_load_stackoverflow) | 1993-10-12 |
Family
ID=15495641
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15037687A Granted JPS63312975A (ja) | 1987-06-17 | 1987-06-17 | アルミニウムスパツタリングタ−ゲツト |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63312975A (enrdf_load_stackoverflow) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2928330B2 (ja) * | 1990-05-11 | 1999-08-03 | 株式会社神戸製鋼所 | 光メディア用スパッタリングターゲット溶製材 |
US5500301A (en) | 1991-03-07 | 1996-03-19 | Kabushiki Kaisha Kobe Seiko Sho | A1 alloy films and melting A1 alloy sputtering targets for depositing A1 alloy films |
JP2857015B2 (ja) * | 1993-04-08 | 1999-02-10 | 株式会社ジャパンエナジー | 高純度アルミニウムまたはその合金からなるスパッタリングターゲット |
US5772860A (en) | 1993-09-27 | 1998-06-30 | Japan Energy Corporation | High purity titanium sputtering targets |
JP3720456B2 (ja) * | 1996-05-17 | 2005-11-30 | キヤノン株式会社 | 光起電力素子 |
US9752228B2 (en) * | 2009-04-03 | 2017-09-05 | Applied Materials, Inc. | Sputtering target for PVD chamber |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5558369A (en) * | 1978-10-20 | 1980-05-01 | Nec Corp | Preparation of electric conductive film of aluminum-silicon alloy |
-
1987
- 1987-06-17 JP JP15037687A patent/JPS63312975A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS63312975A (ja) | 1988-12-21 |
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