JPH0242897B2 - - Google Patents
Info
- Publication number
- JPH0242897B2 JPH0242897B2 JP20205682A JP20205682A JPH0242897B2 JP H0242897 B2 JPH0242897 B2 JP H0242897B2 JP 20205682 A JP20205682 A JP 20205682A JP 20205682 A JP20205682 A JP 20205682A JP H0242897 B2 JPH0242897 B2 JP H0242897B2
- Authority
- JP
- Japan
- Prior art keywords
- melting point
- point metal
- target
- metal silicide
- high melting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005530 etching Methods 0.000 claims description 17
- 229910021332 silicide Inorganic materials 0.000 claims description 17
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 238000002844 melting Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- 230000008018 melting Effects 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims 1
- 239000007789 gas Substances 0.000 description 23
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 14
- 238000004544 sputter deposition Methods 0.000 description 10
- 229910052786 argon Inorganic materials 0.000 description 7
- 229910001385 heavy metal Inorganic materials 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000003513 alkali Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002366 halogen compounds Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/08—Epitaxial-layer growth by condensing ionised vapours
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20205682A JPS5992995A (ja) | 1982-11-19 | 1982-11-19 | 高融点金属シリサイド膜の形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20205682A JPS5992995A (ja) | 1982-11-19 | 1982-11-19 | 高融点金属シリサイド膜の形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5992995A JPS5992995A (ja) | 1984-05-29 |
| JPH0242897B2 true JPH0242897B2 (enrdf_load_stackoverflow) | 1990-09-26 |
Family
ID=16451205
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20205682A Granted JPS5992995A (ja) | 1982-11-19 | 1982-11-19 | 高融点金属シリサイド膜の形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5992995A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63303067A (ja) * | 1987-06-02 | 1988-12-09 | Anelva Corp | バイアススパッタ装置 |
| JPH0685352B2 (ja) * | 1988-09-29 | 1994-10-26 | 松下電器産業株式会社 | 高周波スパッタリング方法と薄膜ｅｌ素子の製造方法 |
| US5853552A (en) * | 1993-09-09 | 1998-12-29 | Nippondenso Co., Ltd. | Process for the production of electroluminescence element, electroluminescence element |
-
1982
- 1982-11-19 JP JP20205682A patent/JPS5992995A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5992995A (ja) | 1984-05-29 |
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