JPS5992995A - 高融点金属シリサイド膜の形成方法 - Google Patents

高融点金属シリサイド膜の形成方法

Info

Publication number
JPS5992995A
JPS5992995A JP20205682A JP20205682A JPS5992995A JP S5992995 A JPS5992995 A JP S5992995A JP 20205682 A JP20205682 A JP 20205682A JP 20205682 A JP20205682 A JP 20205682A JP S5992995 A JPS5992995 A JP S5992995A
Authority
JP
Japan
Prior art keywords
gas
plasma
silicide film
target
plasma generating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20205682A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0242897B2 (enrdf_load_stackoverflow
Inventor
Hiroyuki Matsumoto
博之 松本
Morio Inoue
井上　森雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp, Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electronics Corp
Priority to JP20205682A priority Critical patent/JPS5992995A/ja
Publication of JPS5992995A publication Critical patent/JPS5992995A/ja
Publication of JPH0242897B2 publication Critical patent/JPH0242897B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/08—Epitaxial-layer growth by condensing ionised vapours

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
  • Electrodes Of Semiconductors (AREA)
JP20205682A 1982-11-19 1982-11-19 高融点金属シリサイド膜の形成方法 Granted JPS5992995A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20205682A JPS5992995A (ja) 1982-11-19 1982-11-19 高融点金属シリサイド膜の形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20205682A JPS5992995A (ja) 1982-11-19 1982-11-19 高融点金属シリサイド膜の形成方法

Publications (2)

Publication Number Publication Date
JPS5992995A true JPS5992995A (ja) 1984-05-29
JPH0242897B2 JPH0242897B2 (enrdf_load_stackoverflow) 1990-09-26

Family

ID=16451205

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20205682A Granted JPS5992995A (ja) 1982-11-19 1982-11-19 高融点金属シリサイド膜の形成方法

Country Status (1)

Country Link
JP (1) JPS5992995A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63303067A (ja) * 1987-06-02 1988-12-09 Anelva Corp バイアススパッタ装置
JPH0294288A (ja) * 1988-09-29 1990-04-05 Matsushita Electric Ind Co Ltd 高周波スパッタリング方法
US5853552A (en) * 1993-09-09 1998-12-29 Nippondenso Co., Ltd. Process for the production of electroluminescence element, electroluminescence element

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63303067A (ja) * 1987-06-02 1988-12-09 Anelva Corp バイアススパッタ装置
JPH0294288A (ja) * 1988-09-29 1990-04-05 Matsushita Electric Ind Co Ltd 高周波スパッタリング方法
US5853552A (en) * 1993-09-09 1998-12-29 Nippondenso Co., Ltd. Process for the production of electroluminescence element, electroluminescence element
US5936346A (en) * 1993-09-09 1999-08-10 Nippondenso Co., Ltd. Process for the production of electroluminescence element, electroluminescence element

Also Published As

Publication number Publication date
JPH0242897B2 (enrdf_load_stackoverflow) 1990-09-26

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