JPS63142887A - 半導体発光素子 - Google Patents

半導体発光素子

Info

Publication number
JPS63142887A
JPS63142887A JP61291299A JP29129986A JPS63142887A JP S63142887 A JPS63142887 A JP S63142887A JP 61291299 A JP61291299 A JP 61291299A JP 29129986 A JP29129986 A JP 29129986A JP S63142887 A JPS63142887 A JP S63142887A
Authority
JP
Japan
Prior art keywords
mode mixing
laser array
light emitting
semiconductor laser
mixing element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61291299A
Other languages
English (en)
Japanese (ja)
Other versions
JPH054835B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Mototaka Tanetani
元隆 種谷
Akihiro Matsumoto
晃広 松本
Kaneki Matsui
完益 松井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP61291299A priority Critical patent/JPS63142887A/ja
Priority to US07/127,836 priority patent/US4870651A/en
Priority to EP87310716A priority patent/EP0270381B1/en
Priority to DE8787310716T priority patent/DE3772168D1/de
Publication of JPS63142887A publication Critical patent/JPS63142887A/ja
Publication of JPH054835B2 publication Critical patent/JPH054835B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4062—Edge-emitting structures with an external cavity or using internal filters, e.g. Talbot filters

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP61291299A 1986-12-05 1986-12-05 半導体発光素子 Granted JPS63142887A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP61291299A JPS63142887A (ja) 1986-12-05 1986-12-05 半導体発光素子
US07/127,836 US4870651A (en) 1986-12-05 1987-12-02 Semiconductor light-emitting apparatus
EP87310716A EP0270381B1 (en) 1986-12-05 1987-12-04 A semiconductor light-emitting apparatus
DE8787310716T DE3772168D1 (de) 1986-12-05 1987-12-04 Lichtaussendende halbleitervorrichtung.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61291299A JPS63142887A (ja) 1986-12-05 1986-12-05 半導体発光素子

Publications (2)

Publication Number Publication Date
JPS63142887A true JPS63142887A (ja) 1988-06-15
JPH054835B2 JPH054835B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-01-20

Family

ID=17767090

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61291299A Granted JPS63142887A (ja) 1986-12-05 1986-12-05 半導体発光素子

Country Status (4)

Country Link
US (1) US4870651A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (1) EP0270381B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS63142887A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3772168D1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002335035A (ja) * 2001-05-10 2002-11-22 Hamamatsu Photonics Kk 半導体レーザ装置

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5022042A (en) * 1990-09-10 1991-06-04 General Dynamics Corp. High power laser array with stable wavelength
DE4123858C1 (en) * 1991-07-18 1992-12-03 Messerschmitt-Boelkow-Blohm Gmbh, 8012 Ottobrunn, De Semiconductor laser array stabilising arrangement - provides fibre-shaped reflectors so that radiation characteristic extends as ray along X=axis
US5353273A (en) * 1992-08-04 1994-10-04 International Business Machines Corporation Multi-channel optical head and data storage system
US6370219B1 (en) * 1999-04-20 2002-04-09 Lucent Technologies Inc. Self-modulated, filament-based, solid state laser
US6504859B1 (en) 2000-01-21 2003-01-07 Sandia Corporation Light sources based on semiconductor current filaments
EP1146617A3 (en) * 2000-03-31 2003-04-23 Matsushita Electric Industrial Co., Ltd. High-powered semiconductor laser array apparatus

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4111521A (en) * 1977-01-21 1978-09-05 Xerox Corporation Semiconductor light reflector/light transmitter
US4464759A (en) * 1981-09-21 1984-08-07 Massachusetts Institute Of Technology Semiconductor diode laser system
US4667331A (en) * 1984-01-20 1987-05-19 At&T Company And At&T Bell Laboratories Composite cavity laser utilizing an intra-cavity electrooptic waveguide device
FR2562328B1 (fr) * 1984-03-30 1987-11-27 Menigaux Louis Procede de fabrication d'un dispositif optique integre monolithique comprenant un laser a semi-conducteur et dispositif obtenu par ce procede
US4631730A (en) * 1984-09-28 1986-12-23 Bell Communications Research, Inc. Low noise injection laser structure
FR2574566B1 (fr) * 1984-12-11 1987-01-16 Thomson Csf Diodes emettrices/receptrices de lumiere et elements de transmission optiques non reciproques integres, et leur procede de fabrication
JP3194712B2 (ja) * 1997-06-13 2001-08-06 滋賀県 有機性廃棄物の堆肥化装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002335035A (ja) * 2001-05-10 2002-11-22 Hamamatsu Photonics Kk 半導体レーザ装置

Also Published As

Publication number Publication date
EP0270381A3 (en) 1988-11-09
US4870651A (en) 1989-09-26
JPH054835B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-01-20
EP0270381B1 (en) 1991-08-14
DE3772168D1 (de) 1991-09-19
EP0270381A2 (en) 1988-06-08

Similar Documents

Publication Publication Date Title
JP2959902B2 (ja) 半導体レーザとそれを有する装置とその製造方法
JPS59144193A (ja) 半導体レ−ザ
JPH08116124A (ja) 半導体光素子
JP3154200B2 (ja) マルチビーム半導体レーザ
JPS58190089A (ja) 複数の独立した波長をもつ半導体レ−ザの製造方法及びこの方法によつて作られたレ−ザ
JPS63142887A (ja) 半導体発光素子
GB2181892A (en) A semi-conductor laser
JP2018088456A (ja) 量子カスケード半導体レーザ
JP3017869B2 (ja) 半導体光増幅器
JPS61296785A (ja) 半導体レ−ザアレイ装置
US4723253A (en) Semiconductor laser array
JP2003204121A (ja) 光半導体装置及びその製造方法
JP2846668B2 (ja) ブロードエリアレーザ
JPH055391B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS6257275A (ja) 半導体レ−ザアレイ装置
CN110178275B (zh) 半导体激光元件、半导体激光元件的制造方法
JP2671317B2 (ja) 半導体レーザ
JPH04199133A (ja) 光増幅器および光集積回路
JPS63200591A (ja) 半導体レーザ装置の製造方法
JPH05190977A (ja) 半導体レーザ
JPH0355887A (ja) 半導体発光素子
USRE34356E (en) Semiconductor laser array
DE202024102986U1 (de) Herstellbare gallium- und stickstoffhaltige gekoppelte Wellenleitervorrichtungen
JPS6392083A (ja) 半導体レ−ザアレイ装置
Lay et al. Y-junction and misaligned-stripe diode laser arrays with nonuniform reflective diffraction coupler