JPS63142879A - 半導体レーザ及び半導体レーザの製造方法 - Google Patents

半導体レーザ及び半導体レーザの製造方法

Info

Publication number
JPS63142879A
JPS63142879A JP29026486A JP29026486A JPS63142879A JP S63142879 A JPS63142879 A JP S63142879A JP 29026486 A JP29026486 A JP 29026486A JP 29026486 A JP29026486 A JP 29026486A JP S63142879 A JPS63142879 A JP S63142879A
Authority
JP
Japan
Prior art keywords
layer
waveguide
semiconductor laser
optical waveguide
width
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP29026486A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0569318B2 (enrdf_load_stackoverflow
Inventor
Yoshifumi Tsunekawa
吉文 恒川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP29026486A priority Critical patent/JPS63142879A/ja
Priority to FR8714606A priority patent/FR2606223B1/fr
Priority to US07/113,788 priority patent/US4856013A/en
Priority to DE19873736497 priority patent/DE3736497A1/de
Publication of JPS63142879A publication Critical patent/JPS63142879A/ja
Publication of JPH0569318B2 publication Critical patent/JPH0569318B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)
JP29026486A 1986-10-29 1986-12-05 半導体レーザ及び半導体レーザの製造方法 Granted JPS63142879A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP29026486A JPS63142879A (ja) 1986-12-05 1986-12-05 半導体レーザ及び半導体レーザの製造方法
FR8714606A FR2606223B1 (fr) 1986-10-29 1987-10-22 Laser a semiconducteur et son procede de fabrication
US07/113,788 US4856013A (en) 1986-10-29 1987-10-28 Semiconductor laser having an active layer and cladding layer
DE19873736497 DE3736497A1 (de) 1986-10-29 1987-10-28 Halbleiterlaser und verfahren zu seiner herstellung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29026486A JPS63142879A (ja) 1986-12-05 1986-12-05 半導体レーザ及び半導体レーザの製造方法

Publications (2)

Publication Number Publication Date
JPS63142879A true JPS63142879A (ja) 1988-06-15
JPH0569318B2 JPH0569318B2 (enrdf_load_stackoverflow) 1993-09-30

Family

ID=17753887

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29026486A Granted JPS63142879A (ja) 1986-10-29 1986-12-05 半導体レーザ及び半導体レーザの製造方法

Country Status (1)

Country Link
JP (1) JPS63142879A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5375133A (en) * 1991-03-28 1994-12-20 Seiko Epson Corporation Surface emitting semiconductor laser and method of manufacture
JPH10223966A (ja) * 1997-01-31 1998-08-21 Sharp Corp 利得結合分布帰還型半導体レーザ装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57128092A (en) * 1981-01-30 1982-08-09 Sanyo Electric Co Ltd Imbedded type semiconductor laser device
JPS6058695A (ja) * 1983-09-12 1985-04-04 Nec Corp 埋め込み型半導体レ−ザ素子の製造方法
JPS61144894A (ja) * 1984-12-19 1986-07-02 Sony Corp 半導体レ−ザ−の製法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57128092A (en) * 1981-01-30 1982-08-09 Sanyo Electric Co Ltd Imbedded type semiconductor laser device
JPS6058695A (ja) * 1983-09-12 1985-04-04 Nec Corp 埋め込み型半導体レ−ザ素子の製造方法
JPS61144894A (ja) * 1984-12-19 1986-07-02 Sony Corp 半導体レ−ザ−の製法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5375133A (en) * 1991-03-28 1994-12-20 Seiko Epson Corporation Surface emitting semiconductor laser and method of manufacture
JPH10223966A (ja) * 1997-01-31 1998-08-21 Sharp Corp 利得結合分布帰還型半導体レーザ装置

Also Published As

Publication number Publication date
JPH0569318B2 (enrdf_load_stackoverflow) 1993-09-30

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Legal Events

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