JPH0569318B2 - - Google Patents

Info

Publication number
JPH0569318B2
JPH0569318B2 JP61290264A JP29026486A JPH0569318B2 JP H0569318 B2 JPH0569318 B2 JP H0569318B2 JP 61290264 A JP61290264 A JP 61290264A JP 29026486 A JP29026486 A JP 29026486A JP H0569318 B2 JPH0569318 B2 JP H0569318B2
Authority
JP
Japan
Prior art keywords
cladding layer
layer
group compound
compound semiconductor
refractive index
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP61290264A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63142879A (ja
Inventor
Yoshifumi Tsunekawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP29026486A priority Critical patent/JPS63142879A/ja
Priority to FR8714606A priority patent/FR2606223B1/fr
Priority to DE19873736497 priority patent/DE3736497A1/de
Priority to US07/113,788 priority patent/US4856013A/en
Publication of JPS63142879A publication Critical patent/JPS63142879A/ja
Publication of JPH0569318B2 publication Critical patent/JPH0569318B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)
JP29026486A 1986-10-29 1986-12-05 半導体レーザ及び半導体レーザの製造方法 Granted JPS63142879A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP29026486A JPS63142879A (ja) 1986-12-05 1986-12-05 半導体レーザ及び半導体レーザの製造方法
FR8714606A FR2606223B1 (fr) 1986-10-29 1987-10-22 Laser a semiconducteur et son procede de fabrication
DE19873736497 DE3736497A1 (de) 1986-10-29 1987-10-28 Halbleiterlaser und verfahren zu seiner herstellung
US07/113,788 US4856013A (en) 1986-10-29 1987-10-28 Semiconductor laser having an active layer and cladding layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29026486A JPS63142879A (ja) 1986-12-05 1986-12-05 半導体レーザ及び半導体レーザの製造方法

Publications (2)

Publication Number Publication Date
JPS63142879A JPS63142879A (ja) 1988-06-15
JPH0569318B2 true JPH0569318B2 (enrdf_load_stackoverflow) 1993-09-30

Family

ID=17753887

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29026486A Granted JPS63142879A (ja) 1986-10-29 1986-12-05 半導体レーザ及び半導体レーザの製造方法

Country Status (1)

Country Link
JP (1) JPS63142879A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69207521T2 (de) * 1991-03-28 1996-09-05 Seiko Epson Corp Senkrecht zur Oberfläche emittierender Halbleiterlaser und Verfahren zu seiner Herstellung
JP3885978B2 (ja) * 1997-01-31 2007-02-28 シャープ株式会社 利得結合分布帰還型半導体レーザ装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57128092A (en) * 1981-01-30 1982-08-09 Sanyo Electric Co Ltd Imbedded type semiconductor laser device
JPS6058695A (ja) * 1983-09-12 1985-04-04 Nec Corp 埋め込み型半導体レ−ザ素子の製造方法
JPS61144894A (ja) * 1984-12-19 1986-07-02 Sony Corp 半導体レ−ザ−の製法

Also Published As

Publication number Publication date
JPS63142879A (ja) 1988-06-15

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees