JPS63141384A - 面発光型半導体レーザ装置 - Google Patents

面発光型半導体レーザ装置

Info

Publication number
JPS63141384A
JPS63141384A JP28820686A JP28820686A JPS63141384A JP S63141384 A JPS63141384 A JP S63141384A JP 28820686 A JP28820686 A JP 28820686A JP 28820686 A JP28820686 A JP 28820686A JP S63141384 A JPS63141384 A JP S63141384A
Authority
JP
Japan
Prior art keywords
type
layer
layers
laser device
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP28820686A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0531836B2 (enrdf_load_stackoverflow
Inventor
Hirobumi Namisaki
浪崎　博文
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP28820686A priority Critical patent/JPS63141384A/ja
Publication of JPS63141384A publication Critical patent/JPS63141384A/ja
Publication of JPH0531836B2 publication Critical patent/JPH0531836B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18341—Intra-cavity contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
    • H01S5/0424—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer lateral current injection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
    • H01S5/1835—Non-circular mesa

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP28820686A 1986-12-03 1986-12-03 面発光型半導体レーザ装置 Granted JPS63141384A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28820686A JPS63141384A (ja) 1986-12-03 1986-12-03 面発光型半導体レーザ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28820686A JPS63141384A (ja) 1986-12-03 1986-12-03 面発光型半導体レーザ装置

Publications (2)

Publication Number Publication Date
JPS63141384A true JPS63141384A (ja) 1988-06-13
JPH0531836B2 JPH0531836B2 (enrdf_load_stackoverflow) 1993-05-13

Family

ID=17727192

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28820686A Granted JPS63141384A (ja) 1986-12-03 1986-12-03 面発光型半導体レーザ装置

Country Status (1)

Country Link
JP (1) JPS63141384A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001094209A (ja) * 1999-09-03 2001-04-06 Agilent Technol Inc 垂直共振器表面発光レーザーの光共振器損失を最小化する方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59152683A (ja) * 1983-02-21 1984-08-31 Nec Corp 面発光半導体レ−ザ

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59152683A (ja) * 1983-02-21 1984-08-31 Nec Corp 面発光半導体レ−ザ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001094209A (ja) * 1999-09-03 2001-04-06 Agilent Technol Inc 垂直共振器表面発光レーザーの光共振器損失を最小化する方法

Also Published As

Publication number Publication date
JPH0531836B2 (enrdf_load_stackoverflow) 1993-05-13

Similar Documents

Publication Publication Date Title
JP7689112B2 (ja) ２次元フォトニック結晶レーザ
JP2531655B2 (ja) 半導体装置
US5345464A (en) Semiconductor laser
US4815083A (en) Buried heterostructure semiconductor laser with high-resistivity semiconductor layer for current confinement
JPS63202985A (ja) 半導体レ−ザ装置の製造方法
US5214663A (en) Semiconductor laser
JPH02156692A (ja) 半導体レーザおよびその製造方法
JPH08307003A (ja) 半導体レーザ装置
JPS63141384A (ja) 面発光型半導体レーザ装置
US4809289A (en) Semiconductor laser device
US4768200A (en) Internal current confinement type semiconductor light emission device
JP2697453B2 (ja) 面発光レーザ
JPS6243193A (ja) 半導体レ−ザ
JPS6373691A (ja) 半導体レ−ザ装置
JPS6251283A (ja) 半導体発光装置
JP3206573B2 (ja) 半導体レーザおよびその作製方法
JPS6045087A (ja) 半導体レ−ザ装置
JPH01125570U (enrdf_load_stackoverflow)
JPS60164379A (ja) 半導体レ−ザ−
JPS6432693A (en) Semiconductor optical functional light-emitting element
JPS63104494A (ja) 半導体レ−ザ装置
JPH02155263A (ja) 半導体光メモリ
JPH03116991A (ja) 半導体レーザ装置
JPS62279688A (ja) 半導体レ−ザ素子の製造方法
JPS63164383A (ja) 光導波路およびその製造方法