JPH0531836B2 - - Google Patents

Info

Publication number
JPH0531836B2
JPH0531836B2 JP61288206A JP28820686A JPH0531836B2 JP H0531836 B2 JPH0531836 B2 JP H0531836B2 JP 61288206 A JP61288206 A JP 61288206A JP 28820686 A JP28820686 A JP 28820686A JP H0531836 B2 JPH0531836 B2 JP H0531836B2
Authority
JP
Japan
Prior art keywords
layer
conductivity type
active layer
semiconductor layer
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61288206A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63141384A (ja
Inventor
Hirobumi Namisaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP28820686A priority Critical patent/JPS63141384A/ja
Publication of JPS63141384A publication Critical patent/JPS63141384A/ja
Publication of JPH0531836B2 publication Critical patent/JPH0531836B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18341—Intra-cavity contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
    • H01S5/0424—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer lateral current injection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
    • H01S5/1835—Non-circular mesa

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP28820686A 1986-12-03 1986-12-03 面発光型半導体レーザ装置 Granted JPS63141384A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28820686A JPS63141384A (ja) 1986-12-03 1986-12-03 面発光型半導体レーザ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28820686A JPS63141384A (ja) 1986-12-03 1986-12-03 面発光型半導体レーザ装置

Publications (2)

Publication Number Publication Date
JPS63141384A JPS63141384A (ja) 1988-06-13
JPH0531836B2 true JPH0531836B2 (enrdf_load_stackoverflow) 1993-05-13

Family

ID=17727192

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28820686A Granted JPS63141384A (ja) 1986-12-03 1986-12-03 面発光型半導体レーザ装置

Country Status (1)

Country Link
JP (1) JPS63141384A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1081816A3 (en) * 1999-09-03 2002-04-24 Agilent Technologies, Inc. (a Delaware corporation) Vertical cavity surface emitting laser (VCSEL) having undoped distributed bragg reflectors and using lateral current injection and method for maximizing gain and minimizing optical cavity loss

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59152683A (ja) * 1983-02-21 1984-08-31 Nec Corp 面発光半導体レ−ザ

Also Published As

Publication number Publication date
JPS63141384A (ja) 1988-06-13

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