JPS63141384A - 面発光型半導体レーザ装置 - Google Patents
面発光型半導体レーザ装置Info
- Publication number
- JPS63141384A JPS63141384A JP28820686A JP28820686A JPS63141384A JP S63141384 A JPS63141384 A JP S63141384A JP 28820686 A JP28820686 A JP 28820686A JP 28820686 A JP28820686 A JP 28820686A JP S63141384 A JPS63141384 A JP S63141384A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- laser device
- semiconductor laser
- type
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18341—Intra-cavity contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
- H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
- H01S5/0424—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer lateral current injection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
- H01S5/1835—Non-circular mesa
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP28820686A JPS63141384A (ja) | 1986-12-03 | 1986-12-03 | 面発光型半導体レーザ装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP28820686A JPS63141384A (ja) | 1986-12-03 | 1986-12-03 | 面発光型半導体レーザ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63141384A true JPS63141384A (ja) | 1988-06-13 |
JPH0531836B2 JPH0531836B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-05-13 |
Family
ID=17727192
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP28820686A Granted JPS63141384A (ja) | 1986-12-03 | 1986-12-03 | 面発光型半導体レーザ装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63141384A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001094209A (ja) * | 1999-09-03 | 2001-04-06 | Agilent Technol Inc | 垂直共振器表面発光レーザーの光共振器損失を最小化する方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59152683A (ja) * | 1983-02-21 | 1984-08-31 | Nec Corp | 面発光半導体レ−ザ |
-
1986
- 1986-12-03 JP JP28820686A patent/JPS63141384A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59152683A (ja) * | 1983-02-21 | 1984-08-31 | Nec Corp | 面発光半導体レ−ザ |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001094209A (ja) * | 1999-09-03 | 2001-04-06 | Agilent Technol Inc | 垂直共振器表面発光レーザーの光共振器損失を最小化する方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH0531836B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-05-13 |
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