JPH01125570U - - Google Patents
Info
- Publication number
- JPH01125570U JPH01125570U JP1988124774U JP12477488U JPH01125570U JP H01125570 U JPH01125570 U JP H01125570U JP 1988124774 U JP1988124774 U JP 1988124774U JP 12477488 U JP12477488 U JP 12477488U JP H01125570 U JPH01125570 U JP H01125570U
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor laser
- active region
- bandgap
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19792933035 DE2933035A1 (de) | 1979-08-16 | 1979-08-16 | Halbleiterlaser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01125570U true JPH01125570U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1989-08-28 |
Family
ID=6078497
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10783080A Pending JPS5660090A (en) | 1979-08-16 | 1980-08-07 | Semiconductor laser |
| JP1988124774U Pending JPH01125570U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1979-08-16 | 1988-09-26 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10783080A Pending JPS5660090A (en) | 1979-08-16 | 1980-08-07 | Semiconductor laser |
Country Status (4)
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4438446A (en) * | 1981-05-29 | 1984-03-20 | Bell Telephone Laboratories, Incorporated | Double barrier double heterostructure laser |
| US5055894A (en) * | 1988-09-29 | 1991-10-08 | The Boeing Company | Monolithic interleaved LED/PIN photodetector array |
| JPH03237784A (ja) * | 1990-02-15 | 1991-10-23 | Omron Corp | 半導体素子およびその製造方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50150392A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1974-05-21 | 1975-12-02 | ||
| JPS52106283A (en) * | 1976-03-03 | 1977-09-06 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser unit |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3691476A (en) * | 1970-12-31 | 1972-09-12 | Bell Telephone Labor Inc | Double heterostructure laser diodes |
| JPS52109884A (en) * | 1976-03-11 | 1977-09-14 | Nec Corp | Stripe type hetero junction semoonductor laser |
| CA1061555A (en) * | 1976-03-12 | 1979-09-04 | Tomy Kogyo Co. | Toy garage |
| DE2822146C2 (de) * | 1978-05-20 | 1982-11-25 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Heterostruktur-Halbleiterlaserdiode und Verfahren zur Herstellung einer Heterostruktur-Halbleiterdiode |
| US4233090A (en) * | 1979-06-28 | 1980-11-11 | Rca Corporation | Method of making a laser diode |
| JPH05338280A (ja) * | 1992-06-12 | 1993-12-21 | Canon Inc | 印刷方法及びその装置 |
-
1979
- 1979-08-16 DE DE19792933035 patent/DE2933035A1/de active Granted
-
1980
- 1980-08-07 JP JP10783080A patent/JPS5660090A/ja active Pending
- 1980-08-14 FR FR8018001A patent/FR2463528A1/fr active Granted
- 1980-08-15 US US06/178,568 patent/US4359775A/en not_active Expired - Lifetime
-
1988
- 1988-09-26 JP JP1988124774U patent/JPH01125570U/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50150392A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1974-05-21 | 1975-12-02 | ||
| JPS52106283A (en) * | 1976-03-03 | 1977-09-06 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser unit |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2933035C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1989-10-12 |
| FR2463528A1 (fr) | 1981-02-20 |
| US4359775A (en) | 1982-11-16 |
| DE2933035A1 (de) | 1981-03-26 |
| JPS5660090A (en) | 1981-05-23 |
| FR2463528B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1984-06-01 |