JPS631327U - - Google Patents

Info

Publication number
JPS631327U
JPS631327U JP9458386U JP9458386U JPS631327U JP S631327 U JPS631327 U JP S631327U JP 9458386 U JP9458386 U JP 9458386U JP 9458386 U JP9458386 U JP 9458386U JP S631327 U JPS631327 U JP S631327U
Authority
JP
Japan
Prior art keywords
processing apparatus
hot plate
resist processing
semiconductor wafer
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9458386U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP9458386U priority Critical patent/JPS631327U/ja
Publication of JPS631327U publication Critical patent/JPS631327U/ja
Pending legal-status Critical Current

Links

Description

【図面の簡単な説明】
第１図はレジスト処理装置の一例の説明図、第
２図は本考案の要部の斜視図である。 １…高圧水銀灯、２…凹面ミラー、３…シヤツ
ター、４…フオトレジスト、５…半導体ウエハ、
６…ホツトプレート、７…真空吸着孔、８…連通
孔、９…ヒータリード線、１０…ヒータ、１１…
冷却孔、１２…薄膜。

Claims (1)

    【実用新案登録請求の範囲】
  1. 紫外線照射源と、発熱体を内蔵した金属製ホツ
    トプレートを有し、このホツトプレートに載置さ
    れた半導体ウエハに紫外線を照射するレジスト処
    理装置において、該ホツトプレートの少なくとも
    該半導体ウエハが接触する表面にシリコン酸化膜
    、シリコン窒化膜、多結晶シリコンの一種から成
    る非晶質膜もしくは多結晶膜を被覆させたことを
    特徴とするレジスト処理装置。
JP9458386U 1986-06-23 1986-06-23 Pending JPS631327U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9458386U JPS631327U (ja) 1986-06-23 1986-06-23

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9458386U JPS631327U (ja) 1986-06-23 1986-06-23

Publications (1)

Publication Number Publication Date
JPS631327U true JPS631327U (ja) 1988-01-07

Family

ID=30958188

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9458386U Pending JPS631327U (ja) 1986-06-23 1986-06-23

Country Status (1)

Country Link
JP (1) JPS631327U (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000331910A (ja) * 1999-05-20 2000-11-30 Ushio Inc レジスト硬化装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50747A (ja) * 1973-05-02 1975-01-07
JPS5366164A (en) * 1976-11-26 1978-06-13 Hitachi Ltd Susceptor for semiconductor wafer processing
JPS54157473A (en) * 1978-06-02 1979-12-12 Toshiba Corp Vapor reaction method for semiconductor wafer
JPS6045247A (ja) * 1983-05-23 1985-03-11 フユージヨン・セミコンダクター・システムズ フオトレジストの硬化方法及び硬化装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50747A (ja) * 1973-05-02 1975-01-07
JPS5366164A (en) * 1976-11-26 1978-06-13 Hitachi Ltd Susceptor for semiconductor wafer processing
JPS54157473A (en) * 1978-06-02 1979-12-12 Toshiba Corp Vapor reaction method for semiconductor wafer
JPS6045247A (ja) * 1983-05-23 1985-03-11 フユージヨン・セミコンダクター・システムズ フオトレジストの硬化方法及び硬化装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000331910A (ja) * 1999-05-20 2000-11-30 Ushio Inc レジスト硬化装置

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