JPH0434732U - - Google Patents

Info

Publication number
JPH0434732U
JPH0434732U JP7563490U JP7563490U JPH0434732U JP H0434732 U JPH0434732 U JP H0434732U JP 7563490 U JP7563490 U JP 7563490U JP 7563490 U JP7563490 U JP 7563490U JP H0434732 U JPH0434732 U JP H0434732U
Authority
JP
Japan
Prior art keywords
holder
semiconductor substrate
diameter
short
short time
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7563490U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP7563490U priority Critical patent/JPH0434732U/ja
Publication of JPH0434732U publication Critical patent/JPH0434732U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Description

【図面の簡単な説明】
第１図は本考案の実施例の短時間アニール装置
の構成を示す概念図、第２図はその要部拡大図、
第３図はＳｉをイオン注入したＧａＡｓウエハの
短時間アニールの雰囲気（ＡｓＨ３分圧）とシー
トキヤリア濃度の測定結果である。 図面において、１……ウエハ、２……サセプタ
、３……リング状覆い、４……溶融石英管、６…
…ハロゲン電球、１２……熱電対、１３……放射
温度計。

Claims (1)

    【実用新案登録請求の範囲】
  1. 略円板状の半導体基板を保持体上に載せて保持
    体を加熱手段で短時間加熱し、主として前記保持
    体からの熱伝達によつて前記半導体基板の短時間
    アニールを行なう装置において、前記半導体基板
    の外周部を覆う、中央部に前記半導体基板の直径
    の５５％〜８０％の直径の穴を有するリング状の
    覆いを保持体上に載せることを特徴とする短時間
    アニール装置。
JP7563490U 1990-07-18 1990-07-18 Pending JPH0434732U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7563490U JPH0434732U (ja) 1990-07-18 1990-07-18

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7563490U JPH0434732U (ja) 1990-07-18 1990-07-18

Publications (1)

Publication Number Publication Date
JPH0434732U true JPH0434732U (ja) 1992-03-23

Family

ID=31616382

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7563490U Pending JPH0434732U (ja) 1990-07-18 1990-07-18

Country Status (1)

Country Link
JP (1) JPH0434732U (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013168462A (ja) * 2012-02-15 2013-08-29 Dainippon Screen Mfg Co Ltd 熱処理装置
US9583346B2 (en) 2013-11-08 2017-02-28 Sumitomo Electric Industries, Ltd. Method for manufacturing silicon carbide semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013168462A (ja) * 2012-02-15 2013-08-29 Dainippon Screen Mfg Co Ltd 熱処理装置
US9583346B2 (en) 2013-11-08 2017-02-28 Sumitomo Electric Industries, Ltd. Method for manufacturing silicon carbide semiconductor device

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