JPS63128675A - 切り込み型絶縁ゲ−ト静電誘導トランジスタ - Google Patents

切り込み型絶縁ゲ−ト静電誘導トランジスタ

Info

Publication number
JPS63128675A
JPS63128675A JP27393586A JP27393586A JPS63128675A JP S63128675 A JPS63128675 A JP S63128675A JP 27393586 A JP27393586 A JP 27393586A JP 27393586 A JP27393586 A JP 27393586A JP S63128675 A JPS63128675 A JP S63128675A
Authority
JP
Japan
Prior art keywords
region
drain
channel region
source
static induction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP27393586A
Other languages
English (en)
Japanese (ja)
Other versions
JPH03792B2 (enrdf_load_stackoverflow
Inventor
Junichi Nishizawa
潤一 西澤
Nobuo Takeda
宣生 竹田
Sohe Suzuki
鈴木　壮兵衛
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Science and Technology Agency
Original Assignee
Research Development Corp of Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Research Development Corp of Japan filed Critical Research Development Corp of Japan
Priority to JP27393586A priority Critical patent/JPS63128675A/ja
Priority to EP95114168A priority patent/EP0690513B1/en
Priority to DE3752273T priority patent/DE3752273T2/de
Priority to DE3752215T priority patent/DE3752215T2/de
Priority to EP93101675A priority patent/EP0547030B1/en
Priority to DE3752255T priority patent/DE3752255T2/de
Priority to EP87310185A priority patent/EP0268472B1/en
Priority to EP92101661A priority patent/EP0481965B1/en
Priority to DE87310185T priority patent/DE3789003T2/de
Publication of JPS63128675A publication Critical patent/JPS63128675A/ja
Publication of JPH03792B2 publication Critical patent/JPH03792B2/ja
Priority to US07/752,934 priority patent/US5115287A/en
Granted legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP27393586A 1986-11-19 1986-11-19 切り込み型絶縁ゲ−ト静電誘導トランジスタ Granted JPS63128675A (ja)

Priority Applications (10)

Application Number Priority Date Filing Date Title
JP27393586A JPS63128675A (ja) 1986-11-19 1986-11-19 切り込み型絶縁ゲ−ト静電誘導トランジスタ
EP95114168A EP0690513B1 (en) 1986-11-19 1987-11-10 Step-cut insulated gate static induction transistors and method of manufacturing the same
DE3752273T DE3752273T2 (de) 1986-11-19 1987-11-10 Statische Induktionstransistoren mit isoliertem Gatter in einer eingeschnittenen Stufe und Verfahren zu deren Herstellung
DE3752255T DE3752255T2 (de) 1986-11-19 1987-11-18 Statische Induktiontransistoren mit isoliertem Gatter in einer eingeschnittenen Stufe und Verfahren zu deren Herstellung
EP93101675A EP0547030B1 (en) 1986-11-19 1987-11-18 Step-cut insulated gate static induction transistors and method of manufacturing the same
DE3752215T DE3752215T2 (de) 1986-11-19 1987-11-18 Verfahren zur Herstellung der Statischen Induktionstransistoren mit isoliertem Gatter in einer eingeschnitteten Stufe
EP87310185A EP0268472B1 (en) 1986-11-19 1987-11-18 Step-cut insulated gate static induction transistors and method of manufacturing the same
EP92101661A EP0481965B1 (en) 1986-11-19 1987-11-18 Method of manufacturing step-cut insulated gate static induction transistors
DE87310185T DE3789003T2 (de) 1986-11-19 1987-11-18 Statische Induktionstransistoren mit isoliertem Gatter in einer eingeschnittenen Stufe und Verfahren zu deren Herstellung.
US07/752,934 US5115287A (en) 1986-11-19 1991-08-30 Step-cut insulated gate static induction transistors and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27393586A JPS63128675A (ja) 1986-11-19 1986-11-19 切り込み型絶縁ゲ−ト静電誘導トランジスタ

Publications (2)

Publication Number Publication Date
JPS63128675A true JPS63128675A (ja) 1988-06-01
JPH03792B2 JPH03792B2 (enrdf_load_stackoverflow) 1991-01-08

Family

ID=17534620

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27393586A Granted JPS63128675A (ja) 1986-11-19 1986-11-19 切り込み型絶縁ゲ−ト静電誘導トランジスタ

Country Status (1)

Country Link
JP (1) JPS63128675A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5169795A (en) * 1989-02-28 1992-12-08 Small Power Communication Systems Research Laboratories Co., Ltd. Method of manufacturing step cut type insulated gate SIT having low-resistance electrode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5169795A (en) * 1989-02-28 1992-12-08 Small Power Communication Systems Research Laboratories Co., Ltd. Method of manufacturing step cut type insulated gate SIT having low-resistance electrode

Also Published As

Publication number Publication date
JPH03792B2 (enrdf_load_stackoverflow) 1991-01-08

Similar Documents

Publication Publication Date Title
US8334178B2 (en) High breakdown voltage double-gate semiconductor device
JP2001044424A (ja) 高耐圧半導体装置
JPH01112764A (ja) 半導体装置
US7663189B2 (en) Silicon-on-sapphire semiconductor device with shallow lightly-doped drain
CN101978506B (zh) 高击穿电压的双栅极半导体器件
JPS638624B2 (enrdf_load_stackoverflow)
KR101232589B1 (ko) 고전압 작동 전계 효과 트랜지스터, 및 그것을 위한 바이어스 회로 및 고전압 회로
JPH03129767A (ja) 相補型電界効果トランジスタ
US7268378B1 (en) Structure for reduced gate capacitance in a JFET
JP4389065B2 (ja) Ｓｏｉ−ｍｏｓｆｅｔ
JPS63128675A (ja) 切り込み型絶縁ゲ−ト静電誘導トランジスタ
Falk Leakage current mechanisms and leakage reduction techniques in deep-submicrometer CMOS circuits
JPH04280474A (ja) Ｍｏｓ型トランジスタ
CN113644069B (zh) 一种具有同质栅极金属的新型cmos反相器及其制备方法
JPS63128674A (ja) 切り込み型絶縁ゲ−ト静電誘導トランジスタ
CN102983169B (zh) 高击穿电压的双栅极半导体器件
WO2018040871A1 (zh) 集成耗尽型结型场效应晶体管的器件
JP2005012110A (ja) 極微細ｍｏｓｆｅｔ
JPS62291179A (ja) 二重拡散ｍｏｓｆｅｔ
JP2982049B2 (ja) 絶縁ゲート型静電誘導トランジスタ
JPH01207977A (ja) 半導体装置
JPS60251669A (ja) 半導体装置
JPS6329419B2 (enrdf_load_stackoverflow)
JPH08316469A (ja) 高耐圧半導体装置
JPS5845835B2 (ja) 表面配線方式縦構造電界効果トランジスタ

Legal Events

Date Code Title Description
R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term