JPS6312394B2 - - Google Patents

Info

Publication number
JPS6312394B2
JPS6312394B2 JP57173898A JP17389882A JPS6312394B2 JP S6312394 B2 JPS6312394 B2 JP S6312394B2 JP 57173898 A JP57173898 A JP 57173898A JP 17389882 A JP17389882 A JP 17389882A JP S6312394 B2 JPS6312394 B2 JP S6312394B2
Authority
JP
Japan
Prior art keywords
layer
gaas
electron gas
dimensional electron
gaas layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57173898A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5963770A (ja
Inventor
Haruhisa Kinoshita
Masahiro Akyama
Toshimasa Ishida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP57173898A priority Critical patent/JPS5963770A/ja
Publication of JPS5963770A publication Critical patent/JPS5963770A/ja
Publication of JPS6312394B2 publication Critical patent/JPS6312394B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/472—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having lower bandgap active layer formed on top of wider bandgap layer, e.g. inverted HEMT

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP57173898A 1982-10-05 1982-10-05 半導体装置 Granted JPS5963770A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57173898A JPS5963770A (ja) 1982-10-05 1982-10-05 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57173898A JPS5963770A (ja) 1982-10-05 1982-10-05 半導体装置

Publications (2)

Publication Number Publication Date
JPS5963770A JPS5963770A (ja) 1984-04-11
JPS6312394B2 true JPS6312394B2 (enrdf_load_stackoverflow) 1988-03-18

Family

ID=15969126

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57173898A Granted JPS5963770A (ja) 1982-10-05 1982-10-05 半導体装置

Country Status (1)

Country Link
JP (1) JPS5963770A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0793428B2 (ja) * 1984-10-03 1995-10-09 株式会社日立製作所 半導体装置及びその製造方法
US5172197A (en) * 1990-04-11 1992-12-15 Hughes Aircraft Company Hemt structure with passivated donor layer
US5111255A (en) * 1990-06-05 1992-05-05 At&T Bell Laboratories Buried channel heterojunction field effect transistor

Also Published As

Publication number Publication date
JPS5963770A (ja) 1984-04-11

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