JPS6296399A - ＳｉＣウイスカ−の製造方法 - Google Patents

ＳｉＣウイスカ−の製造方法

Info

Publication number
JPS6296399A
JPS6296399A JP60232772A JP23277285A JPS6296399A JP S6296399 A JPS6296399 A JP S6296399A JP 60232772 A JP60232772 A JP 60232772A JP 23277285 A JP23277285 A JP 23277285A JP S6296399 A JPS6296399 A JP S6296399A
Authority
JP
Japan
Prior art keywords
sic
whisker
whiskers
crucible
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60232772A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0545560B2 (cg-RX-API-DMAC7.html
Inventor
Hajime Saito
肇 斎藤
Tetsuro Urakawa
浦川　哲朗
Masataka Suzuki
正隆 鈴木
Masaaki Mori
正章 森
Hideo Nagashima
長島　秀夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
S T K CERAMICS KENKYUSHO KK
Coorstek KK
STK Ceramics Laboratory Corp
Original Assignee
S T K CERAMICS KENKYUSHO KK
STK Ceramics Laboratory Corp
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by S T K CERAMICS KENKYUSHO KK, STK Ceramics Laboratory Corp, Toshiba Ceramics Co Ltd filed Critical S T K CERAMICS KENKYUSHO KK
Priority to JP60232772A priority Critical patent/JPS6296399A/ja
Publication of JPS6296399A publication Critical patent/JPS6296399A/ja
Publication of JPH0545560B2 publication Critical patent/JPH0545560B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005—Growth of whiskers or needles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP60232772A 1985-10-18 1985-10-18 ＳｉＣウイスカ−の製造方法 Granted JPS6296399A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60232772A JPS6296399A (ja) 1985-10-18 1985-10-18 ＳｉＣウイスカ−の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60232772A JPS6296399A (ja) 1985-10-18 1985-10-18 ＳｉＣウイスカ−の製造方法

Publications (2)

Publication Number Publication Date
JPS6296399A true JPS6296399A (ja) 1987-05-02
JPH0545560B2 JPH0545560B2 (cg-RX-API-DMAC7.html) 1993-07-09

Family

ID=16944496

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60232772A Granted JPS6296399A (ja) 1985-10-18 1985-10-18 ＳｉＣウイスカ−の製造方法

Country Status (1)

Country Link
JP (1) JPS6296399A (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN120830148A (zh) * 2025-09-16 2025-10-24 浙江工业大学 一种氮化铝包覆碳化硅复合陶瓷晶须的制备方法及其产品

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5945640A (ja) * 1982-09-09 1984-03-14 Hitachi Ltd レンズ姿勢調整装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5945640A (ja) * 1982-09-09 1984-03-14 Hitachi Ltd レンズ姿勢調整装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN120830148A (zh) * 2025-09-16 2025-10-24 浙江工业大学 一种氮化铝包覆碳化硅复合陶瓷晶须的制备方法及其产品

Also Published As

Publication number Publication date
JPH0545560B2 (cg-RX-API-DMAC7.html) 1993-07-09

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