JPH0545560B2 - - Google Patents

Info

Publication number
JPH0545560B2
JPH0545560B2 JP60232772A JP23277285A JPH0545560B2 JP H0545560 B2 JPH0545560 B2 JP H0545560B2 JP 60232772 A JP60232772 A JP 60232772A JP 23277285 A JP23277285 A JP 23277285A JP H0545560 B2 JPH0545560 B2 JP H0545560B2
Authority
JP
Japan
Prior art keywords
sio
sic
whiskers
crucible
whisker
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60232772A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6296399A (ja
Inventor
Hajime Saito
Tetsuro Urakawa
Masataka Suzuki
Masaaki Mori
Hideo Nagashima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
STK Ceramics Laboratory Corp
Original Assignee
STK Ceramics Laboratory Corp
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STK Ceramics Laboratory Corp, Toshiba Ceramics Co Ltd filed Critical STK Ceramics Laboratory Corp
Priority to JP60232772A priority Critical patent/JPS6296399A/ja
Publication of JPS6296399A publication Critical patent/JPS6296399A/ja
Publication of JPH0545560B2 publication Critical patent/JPH0545560B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005Growth of whiskers or needles
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/36Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP60232772A 1985-10-18 1985-10-18 SiCウイスカ−の製造方法 Granted JPS6296399A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60232772A JPS6296399A (ja) 1985-10-18 1985-10-18 SiCウイスカ−の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60232772A JPS6296399A (ja) 1985-10-18 1985-10-18 SiCウイスカ−の製造方法

Publications (2)

Publication Number Publication Date
JPS6296399A JPS6296399A (ja) 1987-05-02
JPH0545560B2 true JPH0545560B2 (cg-RX-API-DMAC7.html) 1993-07-09

Family

ID=16944496

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60232772A Granted JPS6296399A (ja) 1985-10-18 1985-10-18 SiCウイスカ−の製造方法

Country Status (1)

Country Link
JP (1) JPS6296399A (cg-RX-API-DMAC7.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN120830148B (zh) * 2025-09-16 2025-12-05 浙江工业大学 一种氮化铝包覆碳化硅复合陶瓷晶须的制备方法及其产品

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5945640A (ja) * 1982-09-09 1984-03-14 Hitachi Ltd レンズ姿勢調整装置

Also Published As

Publication number Publication date
JPS6296399A (ja) 1987-05-02

Similar Documents

Publication Publication Date Title
AU738233B2 (en) Production Process and apparatus for high purity silicon
US20110085960A1 (en) Method of manufacturing high-surface-area silicon
US4241037A (en) Process for purifying silicon
US4837376A (en) Process for refining silicon and silicon purified thereby
CN101671023A (zh) 一种多晶硅除硼提纯方法
KR20110112334A (ko) 고순도 질화규소 제조방법
US4676968A (en) Melt consolidation of silicon powder
JP2010535149A (ja) 高純度元素シリコンの製造方法
US5221526A (en) Production of silicon carbide whiskers using a seeding component to determine shape and size of whiskers
JPH08217424A (ja) 六方晶窒化ほう素粉末及びその製造方法
JPH0545560B2 (cg-RX-API-DMAC7.html)
JPS6111886B2 (cg-RX-API-DMAC7.html)
US3514256A (en) Fibrous corundum and its preparation
JPS623098A (ja) 炭化ケイ素ウイスカ−の製造方法
JPH0640713A (ja) 石英粉の脱水方法
JP2721678B2 (ja) β−炭化珪素成形体及びその製造法
JPS5820799A (ja) 炭化珪素ウイスカ−の製造法
JPH0375209A (ja) セラミックス原料の製造方法
JPS61227995A (ja) SiCウイスカ−の製造方法
JPH02180710A (ja) 微粉状αまたはβ炭化ケイ素の製造方法
JPS61227993A (ja) SiCウイスカ−の製造方法
JPH0151443B2 (cg-RX-API-DMAC7.html)
JPS5848487B2 (ja) 高純度炭化珪素粉末の製造方法
RU2707053C1 (ru) Способ очистки металлургического кремния от углерода
JP2683397B2 (ja) SiCウィスカーの製造方法