JPS6296389A - 単結晶製造装置 - Google Patents

単結晶製造装置

Info

Publication number
JPS6296389A
JPS6296389A JP23279885A JP23279885A JPS6296389A JP S6296389 A JPS6296389 A JP S6296389A JP 23279885 A JP23279885 A JP 23279885A JP 23279885 A JP23279885 A JP 23279885A JP S6296389 A JPS6296389 A JP S6296389A
Authority
JP
Japan
Prior art keywords
molten metal
seed
single crystal
crucible
capacitance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP23279885A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0331674B2 (enExample
Inventor
Yasuyuki Kasanami
笠波　保幸
Yukichi Horioka
佑吉 堀岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NIPPON SILICON KK
Mitsubishi Metal Corp
Original Assignee
NIPPON SILICON KK
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NIPPON SILICON KK, Mitsubishi Metal Corp filed Critical NIPPON SILICON KK
Priority to JP23279885A priority Critical patent/JPS6296389A/ja
Publication of JPS6296389A publication Critical patent/JPS6296389A/ja
Publication of JPH0331674B2 publication Critical patent/JPH0331674B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP23279885A 1985-10-18 1985-10-18 単結晶製造装置 Granted JPS6296389A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23279885A JPS6296389A (ja) 1985-10-18 1985-10-18 単結晶製造装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23279885A JPS6296389A (ja) 1985-10-18 1985-10-18 単結晶製造装置

Publications (2)

Publication Number Publication Date
JPS6296389A true JPS6296389A (ja) 1987-05-02
JPH0331674B2 JPH0331674B2 (enExample) 1991-05-08

Family

ID=16944921

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23279885A Granted JPS6296389A (ja) 1985-10-18 1985-10-18 単結晶製造装置

Country Status (1)

Country Link
JP (1) JPS6296389A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH071072U (ja) * 1994-04-28 1995-01-10 三菱マテリアル株式会社 単結晶引上装置
CN109610000A (zh) * 2019-02-19 2019-04-12 冯萍 一种热场供热稳定的单晶炉
CN113502533A (zh) * 2021-09-09 2021-10-15 江苏矽时代材料科技有限公司 一种具有可控冷却装置的单晶硅直拉炉

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7310717B2 (ja) 2020-05-27 2023-07-19 株式会社島津製作所 表面分析装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH071072U (ja) * 1994-04-28 1995-01-10 三菱マテリアル株式会社 単結晶引上装置
CN109610000A (zh) * 2019-02-19 2019-04-12 冯萍 一种热场供热稳定的单晶炉
CN113502533A (zh) * 2021-09-09 2021-10-15 江苏矽时代材料科技有限公司 一种具有可控冷却装置的单晶硅直拉炉
CN113502533B (zh) * 2021-09-09 2021-11-12 江苏矽时代材料科技有限公司 一种具有可控冷却装置的单晶硅直拉炉

Also Published As

Publication number Publication date
JPH0331674B2 (enExample) 1991-05-08

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