JPS6290964A - 集積回路保護構造 - Google Patents
集積回路保護構造Info
- Publication number
- JPS6290964A JPS6290964A JP18669786A JP18669786A JPS6290964A JP S6290964 A JPS6290964 A JP S6290964A JP 18669786 A JP18669786 A JP 18669786A JP 18669786 A JP18669786 A JP 18669786A JP S6290964 A JPS6290964 A JP S6290964A
- Authority
- JP
- Japan
- Prior art keywords
- diffusion region
- integrated circuit
- epitaxial layer
- conductivity type
- protective structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009792 diffusion process Methods 0.000 claims description 61
- 230000001681 protective effect Effects 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 14
- 238000009413 insulation Methods 0.000 claims description 2
- 230000015556 catabolic process Effects 0.000 description 7
- 230000007704 transition Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB8520038 | 1985-08-09 | ||
GB8520038A GB2179494B (en) | 1985-08-09 | 1985-08-09 | Protection structures for integrated circuits |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6290964A true JPS6290964A (ja) | 1987-04-25 |
Family
ID=10583554
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18669786A Pending JPS6290964A (ja) | 1985-08-09 | 1986-08-08 | 集積回路保護構造 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPS6290964A (de) |
DE (1) | DE3626858A1 (de) |
GB (1) | GB2179494B (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015072990A (ja) * | 2013-10-02 | 2015-04-16 | サンケン電気株式会社 | 半導体装置 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR900008746B1 (ko) * | 1986-11-19 | 1990-11-29 | 삼성전자 주식회사 | 접합 파괴장치 반도체장치 |
DE3714647C2 (de) * | 1987-05-02 | 1993-10-07 | Telefunken Microelectron | Integrierte Schaltungsanordnung |
US5708289A (en) * | 1996-02-29 | 1998-01-13 | Sgs-Thomson Microelectronics, Inc. | Pad protection diode structure |
EP0905781A3 (de) * | 1997-09-30 | 2000-11-02 | Siemens Aktiengesellschaft | ESD-Schutzdiode |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1073551A (en) * | 1964-07-02 | 1967-06-28 | Westinghouse Electric Corp | Integrated circuit comprising a diode and method of making the same |
GB1188864A (en) * | 1967-07-06 | 1970-04-22 | Itt | Method for the Manufacturing of a Solid State Circuit Adaptable as H.F. Tuner. |
GB1281058A (en) * | 1968-12-31 | 1972-07-12 | Texas Instruments Inc | High speed semiconductor switching device |
BE754677A (fr) * | 1969-08-11 | 1971-01-18 | Rca Corp | Circuits integres fonctionnant sur courant |
US3699362A (en) * | 1971-05-27 | 1972-10-17 | Ibm | Transistor logic circuit |
US4027325A (en) * | 1975-01-30 | 1977-05-31 | Sprague Electric Company | Integrated full wave diode bridge rectifier |
US4117507A (en) * | 1976-06-22 | 1978-09-26 | Sgs-Ates Componeti Elettronici S.P.A. | Diode formed in integrated-circuit structure |
JPS577151A (en) * | 1980-06-17 | 1982-01-14 | Nec Corp | Monolithic ic circuit |
JPS57166068A (en) * | 1981-04-07 | 1982-10-13 | Toshiba Corp | Semiconductor device |
JPS59134863A (ja) * | 1982-12-28 | 1984-08-02 | Fujitsu Ltd | 静電破壊防止回路 |
-
1985
- 1985-08-09 GB GB8520038A patent/GB2179494B/en not_active Expired
-
1986
- 1986-08-08 JP JP18669786A patent/JPS6290964A/ja active Pending
- 1986-08-08 DE DE19863626858 patent/DE3626858A1/de not_active Withdrawn
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015072990A (ja) * | 2013-10-02 | 2015-04-16 | サンケン電気株式会社 | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
GB2179494A (en) | 1987-03-04 |
DE3626858A1 (de) | 1987-02-19 |
GB8520038D0 (en) | 1985-09-18 |
GB2179494B (en) | 1989-07-26 |
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